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ATC100B0R3JT500XT 参数 Datasheet PDF下载

ATC100B0R3JT500XT图片预览
型号: ATC100B0R3JT500XT
PDF下载: 下载PDF文件 查看货源
内容描述: [RF LDMOS Wideband Integrated Power Amplifiers]
分类和应用:
文件页数/大小: 27 页 / 1718 K
品牌: NXP [ NXP ]
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Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
--0.5, +65  
--0.5, +5  
32, +0  
--65 to +150  
150  
Unit  
Vdc  
Vdc  
Vdc  
°C  
Drain--Source Voltage  
Gate--Source Voltage  
Operating Voltage  
V
DSS  
V
GS  
DD  
V
Storage Temperature Range  
Case Operating Temperature  
Operating Junction Temperature  
Input Power  
T
stg  
T
C
°C  
(1,2)  
T
225  
°C  
J
P
20  
dBm  
in  
Table 2. Thermal Characteristics  
(2,3)  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Value  
Unit  
R
θ
°C/W  
JC  
2 W Avg.  
(P = 2 W CW, Case Temperature = 78°C)  
out  
Stage 1, 28 Vdc, I  
Stage 2, 28 Vdc, I  
= 80 mA  
= 300 mA  
4.3  
1.5  
DQ1  
DQ2  
20 W Avg.  
(P = 20 W CW, Case Temperature = 82°C)  
out  
Stage 1, 28 Vdc, I  
Stage 2, 28 Vdc, I  
= 80 mA  
= 300 mA  
4.3  
1.25  
DQ1  
DQ2  
Table 3. ESD Protection Characteristics  
Test Methodology  
Class  
Human Body Model (per JESD22--A114)  
Machine Model (per EIA/JESD22--A115)  
Charge Device Model (per JESD22--C101)  
0 (Minimum)  
A (Minimum)  
III (Minimum)  
Table 4. Moisture Sensitivity Level  
Test Methodology  
Rating  
Package Peak Temperature  
Unit  
Per JESD22--A113, IPC/JEDEC J--STD--020  
3
260  
°C  
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Stage 1 — Off Characteristics  
Zero Gate Voltage Drain Leakage Current  
I
I
10  
1
μAdc  
μAdc  
μAdc  
DSS  
DSS  
GSS  
(V = 65 Vdc, V = 0 Vdc)  
DS  
GS  
Zero Gate Voltage Drain Leakage Current  
(V = 28 Vdc, V = 0 Vdc)  
DS  
GS  
Gate--Source Leakage Current  
(V = 5 Vdc, V = 0 Vdc)  
I
1
GS  
DS  
Stage 1 — On Characteristics  
Gate Threshold Voltage  
V
V
1.2  
2
2.7  
Vdc  
Vdc  
Vdc  
GS(th)  
GS(Q)  
GG(Q)  
(V = 10 Vdc, I = 23 μAdc)  
DS  
D
Gate Quiescent Voltage  
(V = 28 Vdc, I = 80 mAdc)  
2.8  
12.2  
DS  
DQ1  
Fixture Gate Quiescent Voltage  
(V = 28 Vdc, I = 80 mAdc, Measured in Functional Test)  
V
9.5  
16.5  
DD  
DQ1  
1. Continuous use at maximum temperature will affect MTTF.  
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF  
calculators by product.  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes -- AN1955.  
(continued)  
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1  
RF Device Data  
Freescale Semiconductor  
2
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