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A2T21H360-24SR6 参数 Datasheet PDF下载

A2T21H360-24SR6图片预览
型号: A2T21H360-24SR6
PDF下载: 下载PDF文件 查看货源
内容描述: [N--Channel Enhancement--Mode Lateral MOSFET]
分类和应用:
文件页数/大小: 16 页 / 506 K
品牌: NXP [ NXP ]
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P1dB – TYPICAL PEAKING LOAD PULL CONTOURS — 2140 MHz  
0
0
58  
51  
51  
–1  
–1  
51.5  
–2  
–3  
–4  
–2  
52  
64  
52.5  
53  
E
E
–3  
–4  
62  
60  
P
P
54  
53.5  
54.5  
–5  
–6  
–5  
–6  
54  
52  
48  
56  
58  
50  
56  
2
3
4
6
7
2
3
4
6
7
1
5
1
5
REAL ()  
REAL ()  
Figure 16. P1dB Load Pull Output Power Contours (dBm)  
Figure 17. P1dB Load Pull Efficiency Contours (%)  
0
0
–42  
–1  
–1  
–40  
17  
–2  
–2  
–3  
–4  
–38  
–36  
–34  
16.5  
E
E
–3  
–4  
P
P
14  
13  
16  
–5  
–6  
–5  
–6  
–30  
15.5  
–28  
15  
–32  
14.5  
13.5  
2
3
4
6
7
2
3
4
6
7
1
5
1
5
REAL ()  
REAL ()  
Figure 18. P1dB Load Pull Gain Contours (dB)  
Figure 19. P1dB Load Pull AM/PM Contours ()  
NOTE:  
P
E
= Maximum Output Power  
= Maximum Drain Efficiency  
Gain  
Drain Efficiency  
Linearity  
Output Power  
A2T21H360--24SR6  
RF Device Data  
Freescale Semiconductor, Inc.  
11