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A2I09VD015GNR1 参数 Datasheet PDF下载

A2I09VD015GNR1图片预览
型号: A2I09VD015GNR1
PDF下载: 下载PDF文件 查看货源
内容描述: [RF LDMOS Wideband Integrated Power Amplifiers]
分类和应用:
文件页数/大小: 19 页 / 547 K
品牌: NXP [ NXP ]
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PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS  
Refer to the following resources to aid your design process.  
Application Notes  
AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages  
AN1955: Thermal Measurement Methodology of RF Power Amplifiers  
AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family  
AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family  
Engineering Bulletins  
EB212: Using Data Sheet Impedances for RF LDMOS Devices  
Software  
Electromigration MTTF Calculator  
RF High Power Model  
.s2p File  
Development Tools  
Printed Circuit Boards  
To Download Resources Specific to a Given Part Number:  
1. Go to http://www.nxp.com/RF  
2. Search by part number  
3. Click part number link  
4. Choose the desired resource from the drop down menu  
REVISION HISTORY  
The following table summarizes revisions to this document.  
Revision  
Date  
Description  
0
June 2018  
Initial release of data sheet  
A2I09VD015NR1 A2I09VD015GNR1  
RF Device Data  
NXP Semiconductors  
18  
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