NXP Semiconductors
74HC27; 74HCT27
Triple 3-input NOR gate
Table 7.
Dynamic characteristics type 74HC27; 74HCT27
GND = 0 V; for load circuit see
Figure 7.
Symbol Parameter
Conditions
Min
C
PD
74HCT27
t
pd
propagation delay nA, nB, nC to nY; see
V
CC
= 4.5 V
V
CC
= 5.0 V; C
L
= 15 pF
t
t
C
PD
transition time
power dissipation
capacitance
V
CC
= 4.5 V; see
per package;
V
I
= GND to V
CC
−
1.5 V
25
°C
Typ
24
Max
-
−40 °C
to +125
°C
Unit
Max
(85
°C)
-
Max
(125
°C)
-
pF
power dissipation
capacitance
per package; V
I
= GND to V
CC
-
-
-
-
-
12
10
7
30
21
-
15
-
26
-
19
-
32
-
22
-
ns
ns
ns
pF
[1]
[2]
[3]
t
pd
is the same as t
PHL
and t
PLH
.
t
t
is the same as t
THL
and t
TLH
.
C
PD
is used to determine the dynamic power dissipation (P
D
in
µW):
P
D
= C
PD
×
V
CC2
×
f
i
×
N +
∑
(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
∑
(C
L
×
V
CC2
×
f
o
) = sum of outputs.
11. Waveforms
V
I
nA, nB, nC input
GND
t
PHL
V
OH
nY output
V
OL
t
THL
V
Y
V
M
V
X
t
TLH
001aag761
V
M
t
PLH
Measurement points are given in
V
OL
and V
OH
are typical voltage output drop that occur with the output load.
Fig 6. Input (nA, nB, nC) to output (nY) propagation delays and output transition times
Table 8.
Type
74HC27
74HCT27
Measurement points
Input
V
M
0.5V
CC
1.3 V
Output
V
M
0.5V
CC
1.3 V
V
X
0.1V
CC
0.1V
CC
V
Y
0.9V
CC
0.9V
CC
74HC_HCT27_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 7 January 2008
7 of 16
PHILIPS [ NXP SEMICONDUCTORS ]
