NXP Semiconductors
74HC11; 74HCT11
Triple 3-input AND gate
Table 6.
Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
C
I
74HCT11
V
IH
V
IL
V
OH
HIGH-level
input voltage
LOW-level
input voltage
HIGH-level
output voltage
V
CC
= 4.5 V to 5.5 V
V
CC
= 4.5 V to 5.5 V
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
=
−20 μA
I
O
=
−4.0
mA
V
OL
I
I
I
CC
ΔI
CC
LOW-level
output voltage
input leakage
current
supply current
additional
supply current
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20
μA;
V
CC
= 4.5 V
V
I
= V
CC
or GND;
V
CC
= 5.5 V
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
per input pin;
V
I
= V
CC
−
2.1 V; I
O
= 0 A;
other inputs at V
CC
or GND;
V
CC
= 4.5 V to 5.5 V
-
-
-
-
0
-
-
100
0.1
±0.1
2.0
360
-
-
-
-
0.1
±1
20
450
-
-
-
-
0.1
±1
40
490
V
μA
μA
μA
4.4
3.98
4.5
4.32
-
-
4.4
3.84
-
-
4.4
3.7
-
-
V
V
2.0
-
1.6
1.2
-
0.8
2.0
-
-
0.8
2.0
-
-
0.8
V
V
input
capacitance
Conditions
Min
-
25
°C
Typ
3.5
Max
-
−40 °C
to +85
°C −40 °C
to +125
°C
Unit
Min
-
Max
-
Min
-
Max
-
pF
C
I
input
capacitance
-
3.5
-
-
-
-
-
pF
10. Dynamic characteristics
Table 7.
Dynamic characteristics
GND = 0 V;
C
L
= 50 pF;
for load circuit see
Symbol Parameter
Conditions
Min
74HC11
t
pd
propagation delay nA, nB to nY; see
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 5.0 V; C
L
= 15 pF
V
CC
= 6.0 V
t
t
transition time
see
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
C
PD
power dissipation
capacitance
per package; V
I
= GND to V
CC
25
°C
Typ
Max
−40 °C
to +125
°C
Unit
Max
(85
°C)
Max
(125
°C)
-
-
-
-
-
-
-
-
32
12
9
10
19
7
6
18
100
20
-
17
75
15
13
-
125
25
-
21
95
19
16
-
150
30
-
26
110
22
19
-
ns
ns
ns
ns
ns
ns
ns
pF
74HC_HCT11_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 25 March 2010
5 of 15
PHILIPS [ NXP SEMICONDUCTORS ]
