NXP Semiconductors
74HC02; 74HCT02
Quad 2-input NOR gate
Table 7.
Dynamic characteristics
GND = 0 V;
C
L
= 50 pF;
for load circuit see
Figure 7.
Symbol Parameter
Conditions
Min
74HCT02
t
pd
propagation delay nA, nB to nY; see
V
CC
= 4.5 V
V
CC
= 5.0 V; C
L
= 15 pF
t
t
C
PD
transition time
power dissipation
capacitance
V
CC
= 4.5 V; see
per package;
V
I
= GND to V
CC
−
1.5 V
25
°C
Typ
Max
−40 °C
to +125
°C
Unit
Max
(85
°C)
Max
(125
°C)
-
-
-
-
11
9
7
24
19
-
15
-
24
-
19
-
29
-
22
-
ns
ns
ns
pF
[1]
[2]
[3]
t
pd
is the same as t
PHL
and t
PLH
.
t
t
is the same as t
THL
and t
TLH
.
C
PD
is used to determine the dynamic power dissipation (P
D
in
µW):
P
D
= C
PD
×
V
CC2
×
f
i
×
N +
∑
(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
∑
(C
L
×
V
CC2
×
f
o
) = sum of outputs.
11. Waveforms
V
I
nA, nB input
GND
t
PHL
V
OH
nY output
V
OL
t
THL
V
Y
V
M
V
X
t
TLH
001aai814
V
M
t
PLH
Measurement points are given in
V
OL
and V
OH
are typical voltage output levels that occur with the output load.
Fig 6.
Table 8.
Type
74HC02
74HCT02
Input to output propagation delays
Measurement points
Input
V
M
0.5V
CC
1.3 V
Output
V
M
0.5V
CC
1.3 V
V
X
0.1V
CC
0.1V
CC
V
Y
0.9V
CC
0.9V
CC
74HC_HCT02_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 18 September 2008
6 of 15
PHILIPS [ NXP SEMICONDUCTORS ]
