NAND128-A NAND256-A
128-Mbit or 256-Mbit, 528-byte/264-word page,
3 V, NAND flash memories
Features
■
High density NAND flash memories
– Up to 256-Mbit memory array
– Up to 32-Mbit spare area
– Cost effective solutions for mass storage
applications
NAND interface
– x8 or x16 bus width
– Multiplexed address/ data
– Pinout compatibility for all densities
Supply voltage
– V
DD
= 2.7 to 3.6 V
Page size
– x8 device: (512 + 16 spare) bytes
– x16 device: (256 + 8 spare) words
Block size
– x8 device: (16 K + 512 spare) bytes
– x16 device: (8 K + 256 spare) words
Page read/program
– Random access: 12 µs (max)
– Sequential access: 50 ns (min)
– Page program time: 200 µs (typ)
Copy back program mode
– Fast page copy without external buffering
Fast block erase
– Block erase time: 2 ms (typical)
Status register
Electronic signature
Chip enable ‘don’t care’
– Simple interface with microcontroller
Serial number option
■
TSOP48 12 x 20 mm
●
FBGA
■
VFBGA55 8 x 10 x 1 mm
■
■
Hardware data protection
– Program/erase locked during power
transitions
Data integrity
– 100,000 program/erase cycles
– 10 years data retention
RoHS compliance
– Lead-free components are compliant with
the RoHS directive
Development tools
– Error correction code software and
hardware models
– Bad blocks management and wear leveling
algorithms
– File system OS native reference software
– Hardware simulation models
■
■
■
■
■
■
■
■
■
■
August 2008
Rev 15
1/58
1