欢迎访问ic37.com |
会员登录 免费注册
发布采购

M58LT256JST 参数 Datasheet PDF下载

M58LT256JST图片预览
型号: M58LT256JST
PDF下载: 下载PDF文件 查看货源
内容描述: 256兆位( Mb的16 】 16 ,多银行,多层次,突发) 1.8 V电源供电,安全闪存 [256 Mbit (16 Mb 】 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories]
分类和应用: 闪存
文件页数/大小: 108 页 / 1965 K
品牌: NUMONYX [ NUMONYX B.V ]
 浏览型号M58LT256JST的Datasheet PDF文件第76页浏览型号M58LT256JST的Datasheet PDF文件第77页浏览型号M58LT256JST的Datasheet PDF文件第78页浏览型号M58LT256JST的Datasheet PDF文件第79页浏览型号M58LT256JST的Datasheet PDF文件第81页浏览型号M58LT256JST的Datasheet PDF文件第82页浏览型号M58LT256JST的Datasheet PDF文件第83页浏览型号M58LT256JST的Datasheet PDF文件第84页  
Common Flash interface  
M58LT256JST, M58LT256JSB  
Value  
Table 37. CFI query system interface information  
Offset  
Data  
Description  
V
V
V
V
DD logic supply minimum program/erase or write voltage  
01Bh  
0017h  
1.7 V  
2 V  
bit 7 to 4 BCD value in volts  
bit 3 to 0 BCD value in 100 millivolts  
DD logic supply maximum program/erase or write voltage  
bit 7 to 4 BCD value in volts  
bit 3 to 0 BCD value in 100 millivolts  
01Ch  
01Dh  
01Eh  
0020h  
0085h  
0095h  
PP [programming] supply minimum program/erase voltage  
bit 7 to 4 HEX value in volts  
bit 3 to 0 BCD value in 100 millivolts  
8.5 V  
9.5 V  
PP [programming] supply maximum program/erase voltage  
bit 7 to 4 HEX value in volts  
bit 3 to 0 BCD value in 100 millivolts  
01Fh  
020h  
021h  
022h  
023h  
024h  
025h  
026h  
0008h Typical time-out per single byte/word program = 2n µs  
0009h Typical time-out for Buffer Program = 2n µs  
256 µs  
512 µs  
1 s  
000Ah Typical time-out per individual block erase = 2n ms  
0000h Typical time-out for full chip erase = 2n ms  
NA  
0001h Maximum time-out for word program = 2n times typical  
0001h Maximum time-out for Buffer Program = 2n times typical  
0002h Maximum time-out per individual block erase = 2n times typical  
0000h Maximum time-out for chip erase = 2n times typical  
512 µs  
1024 µs  
4 s  
NA  
80/108  
 复制成功!