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M58LT128HSB8ZA6E 参数 Datasheet PDF下载

M58LT128HSB8ZA6E图片预览
型号: M58LT128HSB8ZA6E
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆位(8 MB 】 16 ,多银行,多接口,突发) 1.8 V电源供电,安全闪存 [128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 110 页 / 2025 K
品牌: NUMONYX [ NUMONYX B.V ]
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M58LT128HST, M58LT128HSB  
Common Flash Interface  
Value  
Table 33. CFI query system interface information  
Offset  
Data  
Description  
V
V
V
V
DD logic supply minimum Program/Erase or Write voltage  
01Bh  
0017h  
1.7V  
2V  
bit 7 to 4 BCD value in volts  
bit 3 to 0 BCD value in 100 millivolts  
DD logic supply maximum Program/Erase or Write voltage  
bit 7 to 4 BCD value in volts  
bit 3 to 0 BCD value in 100 millivolts  
01Ch  
01Dh  
01Eh  
0020h  
0085h  
0095h  
PP [programming] supply minimum Program/Erase voltage  
bit 7 to 4 HEX value in volts  
bit 3 to 0 BCD value in 100 millivolts  
8.5V  
9.5V  
PP [programming] supply maximum Program/Erase voltage  
bit 7 to 4 HEX value in volts  
bit 3 to 0 BCD value in 100 millivolts  
01Fh  
020h  
021h  
022h  
023h  
024h  
025h  
026h  
0004h Typical timeout per single byte/word program = 2n µs  
0009h Typical timeout for Buffer Program = 2n µs  
16µs  
512µs  
1s  
000Ah Typical timeout per individual block erase = 2n ms  
0000h Typical timeout for full chip erase = 2n ms  
NA  
0004h Maximum timeout for word program = 2n times typical  
0004h Maximum timeout for Buffer Program = 2n times typical  
0002h Maximum timeout per individual block erase = 2n times typical  
0000h Maximum timeout for chip erase = 2n times typical  
256 µs  
8192 µs  
4s  
NA  
83/110  
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