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M58LT128HSB8ZA6E 参数 Datasheet PDF下载

M58LT128HSB8ZA6E图片预览
型号: M58LT128HSB8ZA6E
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆位(8 MB 】 16 ,多银行,多接口,突发) 1.8 V电源供电,安全闪存 [128 Mbit (8 Mb 】16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 110 页 / 2025 K
品牌: NUMONYX [ NUMONYX B.V ]
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Part numbering  
M58LT128HST, M58LT128HSB  
14  
Part numbering  
Table 28. Ordering information scheme  
Example:  
M58LT128HST  
8
ZA  
6
E
Device type  
M58  
Architecture  
L = multilevel, multiple bank, burst mode  
Operating voltage  
T = VDD = 1.7 V to 2.0 V, VDDQ = 2.7 V to 3.6 V  
Density  
128 = 128 Mbit (x16)  
Technology  
H = 90nm technology  
Security  
S = Secure  
Parameter location  
T = Top boot  
B = Bottom boot  
Speed  
8 = 85 ns  
Package  
ZA = TBGA64, 10 × 13 mm, 1 mm pitch  
Temperature range  
6 = –40 to 85°C  
Packing option  
E = ECOPACK® package, standard packing  
F = ECOPACK® package, tape & reel packing  
T = tape & reel packing  
Blank = standard packing  
Devices are shipped from the factory with the memory content bits erased to ’1’.  
For a list of available options (speed, package, etc.) or for further information on any aspect  
of this device, please contact the Numonyx Sales Office nearest to you.  
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