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M29W800DT45ZE6E 参数 Datasheet PDF下载

M29W800DT45ZE6E图片预览
型号: M29W800DT45ZE6E
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 1兆位×8或512千位×16 ,引导块) 3 V电源快闪记忆体 [8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory]
分类和应用:
文件页数/大小: 52 页 / 1105 K
品牌: NUMONYX [ NUMONYX B.V ]
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M29W800DT, M29W800DB  
Revision history  
10  
Revision history  
Table 29. Document revision history  
Date  
Version  
Changes  
August 2001  
1.0  
First issue  
Block protection appendix added, SO44 drawing and package  
mechanical data updated, CFI Table 26, address 39h/72h data clarified,  
read/reset operation during erase suspend clarified  
03-Dec-2001  
2.0  
Description of Ready/Busy signal clarified (and Figure 14 modified)  
Clarified allowable commands during block erase  
01-Mar-2002  
11-Apr-2002  
3.0  
4.0  
Clarified the mode the device returns to in the CFI Read Query  
command section  
Temperature range 1 added  
Document promoted from preliminary data to full datasheet  
Erase suspend latency time (typical and maximum) and data retention  
parameters added to Table 6: Program, erase times and program, erase  
endurance cycles, and typical after 100k W/E cycles column removed.  
Minimum voltage corrected for 70 ns speed class in Table 9: Operating  
and AC measurement conditions.  
31-Mar-2003  
13-Feb-2004  
4.1  
Logic diagram and data toggle flowchart corrected.  
Lead-free package options E and F added to Table 19: Ordering  
information scheme.  
TSOP48 package outline and mechanical data updated.  
TFBGA48 6 x 8 mm – 6 x 8 active ball array – 0.80 mm pitch added.  
5
Table 9: Operating and AC measurement conditions updated for 70 ns  
speed option.  
23-Apr-2004  
16-Sep-2004  
6
7
Figure 2: SO connections updated.  
45 ns speed class added.  
Removed TFBGA48 (ZA) (6 x 9 mm) package. Converted to new ST  
corporate template.  
21-Mar-2006  
8
10-Dec-2007  
25-Mar-2008  
9
Applied Numonyx branding.  
Minor text changes.  
10  
51/52