M29W800DT
M29W800DB
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block)
3 V supply flash memory
Features
■ Supply voltage
– V = 2.7 V to 3.6 V for program, erase and
CC
read
■ Access times: 45, 70, 90 ns
■ Programming time
– 10 µs per byte/word typical
SO44 (M)
■ 19 memory blocks
– 1 boot block (top or bottom location)
– 2 parameter and 16 main blocks
■ Program/erase controller
– Embedded byte/word program algorithms
■ Erase suspend and resume modes
TSOP48 (N)
12 x 20 mm
– Read and program another block during
erase suspend
■ Unlock bypass program command
FBGA
– Faster production/batch programming
■ Temporary block unprotection mode
TFBGA48 (ZE)
6 x 8 mm
■ Common flash interface
– 64-bit security code
■ Low power consumption
– Standby and automatic standby
■ 100,000 program/erase cycles per block
■ Electronic signature
– Manufacturer code: 0020h
– Top device code M29W800DT: 22D7h
– Bottom device code M29W800DB: 225Bh
March 2008
Rev 10
1/52
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