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M29W320ET70ZE1 参数 Datasheet PDF下载

M29W320ET70ZE1图片预览
型号: M29W320ET70ZE1
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位( 4Mbx8或2Mbx16 ,统一参数块,引导块) 3V供应闪存 [32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory]
分类和应用: 闪存
文件页数/大小: 63 页 / 1191 K
品牌: NUMONYX [ NUMONYX B.V ]
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M29W320ET, M29W320EB  
Bus operations  
3.5  
Automatic Standby  
If CMOS levels (V  
0.2V) are used to drive the bus and the bus is inactive for 300ns or  
CC  
more the memory enters Automatic Standby where the internal Supply current is reduced to  
the Standby Supply current, I . The Data Inputs/Outputs will still output data if a Bus  
CC2  
Read operation is in progress.  
3.6  
Special bus operations  
Additional bus operations can be performed to read the Electronic signature and also to  
apply and remove Block Protection. These bus operations are intended for use by  
programming equipment and are not usually used in applications. They require V to be  
ID  
applied to some pins.  
3.6.1  
3.6.2  
Electronic signature  
The memory has two codes, the manufacturer code and the device code, that can be read  
to identify the memory. These codes can be read by applying the signals listed in Table 2  
and Table 3, Bus operations.  
Block Protect and Chip Unprotect  
Groups of blocks can be protected against accidental Program or Erase. The Protection  
groups are shown in Appendix A: Block Addresses, Table 20 and Table 21, Block  
Addresses. The whole chip can be unprotected to allow the data inside the blocks to be  
changed.  
The V /Write Protect pin can be used to protect the two outermost boot blocks. When  
PP  
V
/Write Protect is at V the two outermost boot blocks are protected and remain  
PP  
IL  
protected regardless of the Block Protection Status or the Reset/Block Temporary  
Unprotect pin status.  
Block Protect and Chip Unprotect operations are described in Appendix D: Block Protection.  
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