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M29W128GH70N6E 参数 Datasheet PDF下载

M29W128GH70N6E图片预览
型号: M29W128GH70N6E
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆位( Mb的16 ×8或8MB ×16 ,页,均匀的块) 3 V电源闪存 [128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory]
分类和应用: 闪存
文件页数/大小: 94 页 / 1789 K
品牌: NUMONYX [ NUMONYX B.V ]
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DC and AC parameters  
M29W128GH, M29W128GL  
Figure 16. Write Enable Controlled Program waveforms (8-bit mode)  
3rd cycle  
4th cycle  
PA  
Read cycle  
Data Polling  
PA  
tAVAV  
tAVAV  
A0-A22/  
A–1  
555h  
tAVWL  
tWLAX  
tELQV  
tGLQV  
tELWL  
tGHWL  
tWHEH  
E
G
tWLWH  
tWHWL  
W
tDVWH  
tWHWH1  
DQ7  
tGHQZ  
tAXQX  
D
AOh  
PD  
tWHDX  
D
OUT  
DQ0-DQ7  
OUT  
AI13333  
1. Only the third and fourth cycles of the Program command are represented. The Program command is followed by the check  
of Status Register Data Polling bit and by a read operation that outputs the data, DOUT, programmed by the previous  
Program command.  
2. PA is the address of the memory location to be programmed. PD is the data to be programmed.  
3. DQ7 is the complement of the data bit being programmed to DQ7 (see Section 7.2.1: Data Polling bit (DQ7)).  
4. SeeTable 27: Write AC characteristics, Write Enable Controlled, Table 28: Write AC characteristics, Chip Enable  
Controlled and Table 26: Read AC characteristics for details on the timings.  
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