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M25PE80-VMW6TG 参数 Datasheet PDF下载

M25PE80-VMW6TG图片预览
型号: M25PE80-VMW6TG
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位,页擦除串行闪存与字节变性, 75兆赫的SPI总线,标准引脚 [8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 66 页 / 1387 K
品牌: NUMONYX [ NUMONYX B.V ]
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M25PE80  
Instructions  
6.8  
Read lock register (RDLR)  
The device is first selected by driving Chip Select (S) Low. The instruction code for the read  
lock register (RDLR) instruction is followed by a 3-byte address (A23-A0) pointing to any  
location inside the concerned sector (or subsector). Each address bit is latched-in during  
the rising edge of Serial Clock (C). Then the value of the lock register is shifted out on serial  
data output (Q), each bit being shifted out, at a maximum frequency f , during the falling  
C
edge of Serial Clock (C).  
The instruction sequence is shown in Figure 14.  
The read lock register (RDLR) instruction is terminated by driving Chip Select (S) High at  
any time during data output.  
Any read lock register (RDLR) instruction, while an erase, program or write cycle is in  
progress, is rejected without having any effects on the cycle that is in progress.  
Table 10. Lock registers  
Bit  
Bit name  
Value  
Function  
b7-b4  
Reserved  
The write lock and lock down bits cannot be changed. Once a ‘1’  
‘1’ is written to the lock down bit it cannot be cleared to ‘0’, except by  
a reset or power-up.  
b1  
b0  
Sector lock down  
Sector write lock  
The write lock and lock down bits can be changed by writing new  
values to them (default value).  
‘0’  
Write, program and erase operations in this sector will not be  
executed. The memory contents will not be changed.  
‘1’  
Write, program and erase operations in this sector are executed  
and will modify the sector contents (default value).  
‘0’  
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