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M25PE16-VMW6TG 参数 Datasheet PDF下载

M25PE16-VMW6TG图片预览
型号: M25PE16-VMW6TG
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位,页擦除串行闪存与字节变性, 75兆赫的SPI总线,标准引脚 [16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout]
分类和应用: 闪存
文件页数/大小: 58 页 / 1214 K
品牌: NUMONYX [ NUMONYX B.V ]
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M25PE16  
Instructions  
6.2  
Write disable (WRDI)  
The write disable (WRDI) instruction (Figure 7) resets the write enable latch (WEL) bit.  
The write disable (WRDI) instruction is entered by driving Chip Select (S) Low, sending the  
instruction code, and then driving Chip Select (S) High.  
The write enable latch (WEL) bit is reset under the following conditions:  
Power-up  
Write disable (WRDI) instruction completion  
Write status register (WRSR) instruction completion  
Page write (PW) instruction completion  
Page program (PP) instruction completion  
Write to lock register (WRLR) instruction completion  
Page erase (PE) instruction completion  
Sector erase (SE) instruction completion  
Subsector erase (SSE) instruction completion  
Bulk erase (BE) instruction completion  
Figure 7.  
Write disable (WRDI) instruction sequence  
S
0
1
2
3
4
5
6
7
C
D
Q
Instruction  
High Impedance  
AI03750D  
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