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M25P80-VMP6TG 参数 Datasheet PDF下载

M25P80-VMP6TG图片预览
型号: M25P80-VMP6TG
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位,低电压,串行闪存与75 MHz的SPI总线接口 [8 Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface]
分类和应用: 闪存存储内存集成电路时钟
文件页数/大小: 52 页 / 995 K
品牌: NUMONYX [ NUMONYX B.V ]
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M25P80  
Instructions  
Table 4.  
Instruction set  
Description  
One-byte  
Address Dummy  
Data  
Instruction  
instruction code  
bytes  
bytes  
bytes  
WREN  
WRDI  
Write Enable  
0000 0110  
0000 0100  
1001 1111  
0000 0101  
0000 0001  
0000 0011  
06h  
0
0
0
0
0
3
0
0
0
0
0
0
0
0
Write Disable  
04h  
9Fh  
05h  
01h  
03h  
RDID(1)  
RDSR  
WRSR  
READ  
Read Identification  
Read Status Register  
Write Status Register  
Read Data Bytes  
1 to 20  
1 to ∞  
1
1 to ∞  
Read Data Bytes at Higher  
Speed  
FAST_READ  
0000 1011  
0Bh  
3
1
1 to ∞  
PP  
SE  
BE  
DP  
Page Program  
Sector Erase  
Bulk Erase  
0000 0010  
1101 1000  
1100 0111  
1011 1001  
02h  
D8h  
C7h  
B9h  
3
3
0
0
0
0
0
0
1 to 256  
0
0
0
Deep Power-down  
Release from Deep Power-  
down, and Read Electronic  
Signature  
0
0
3
0
1 to ∞  
RES  
1010 1011  
ABh  
Release from Deep Power-  
down  
0
1. The RDID instruction is available only for parts made with Technology T9HX (0.11µm), identified with  
Process letter '4'. (Details of how to find the Technology Process in the part marking are given in AN1995,  
see also Section 12: Part numbering.)  
6.1  
Write Enable (WREN)  
The Write Enable (WREN) instruction (Figure 7) sets the Write Enable Latch (WEL) bit.  
The Write Enable Latch (WEL) bit must be set prior to every Page Program (PP), Sector  
Erase (SE), Bulk Erase (BE) and Write Status Register (WRSR) instruction.  
The Write Enable (WREN) instruction is entered by driving Chip Select (S) Low, sending the  
instruction code, and then driving Chip Select (S) High.  
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