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M25P32-VME6TP 参数 Datasheet PDF下载

M25P32-VME6TP图片预览
型号: M25P32-VME6TP
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位,低电压,串行闪存与75 MHz的SPI总线接口 [32-Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface]
分类和应用: 闪存内存集成电路光电二极管时钟
文件页数/大小: 53 页 / 1012 K
品牌: NUMONYX [ NUMONYX B.V ]
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M25P32  
Operating features  
4
Operating features  
4.1  
Page Programming  
To program one data byte, two instructions are required: Write Enable (WREN), which is one  
byte, and a Page Program (PP) sequence, which consists of four bytes plus data. This is  
followed by the internal Program cycle (of duration t ).  
PP  
To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be  
programmed at a time (changing bits from 1 to 0), provided that they lie in consecutive  
addresses on the same page of memory.  
For optimized timings, it is recommended to use the Page Program (PP) instruction to  
program all consecutive targeted bytes in a single sequence versus using several Page  
Program (PP) sequences with each containing only a few bytes (see Page Program (PP)).  
4.2  
Sector Erase and Bulk Erase  
The Page Program (PP) instruction allows bits to be reset from 1 to 0. Before this can be  
applied, the bytes of memory need to have been erased to all 1s (FFh). This can be  
achieved either a sector at a time, using the Sector Erase (SE) instruction, or throughout the  
entire memory, using the Bulk Erase (BE) instruction. This starts an internal Erase cycle (of  
duration t or t ).  
SE  
BE  
The Erase instruction must be preceded by a Write Enable (WREN) instruction.  
4.3  
4.4  
Polling during a Write, Program or Erase cycle  
A further improvement in the time to Write Status Register (WRSR), Program (PP) or Erase  
(SE or BE) can be achieved by not waiting for the worst case delay (t , t , t , or t ). The  
W
PP SE  
BE  
Write In Progress (WIP) bit is provided in the Status Register so that the application program  
can monitor its value, polling it to establish when the previous Write cycle, Program cycle or  
Erase cycle is complete.  
Fast Program/Erase mode  
The Fast Program/Erase mode is used to speed up programming/erasing. The device  
enters the Fast Program/Erase mode during the Page Program, Sector Erase or Bulk Erase  
instruction whenever a voltage equal to V  
is applied to the W/V pin.  
PPH  
PP  
The use of the Fast Program/Erase mode requires specific operating conditions in addition  
to the normal ones (V must be within the normal operating range):  
CC  
the voltage applied to the W/V pin must be equal to V  
(see Table 10)  
PP  
PPH  
ambient temperature, T must be 25 °C 10 °C,  
A
the cumulated time during which W/V is at V  
should be less than 80 hours  
PPH  
PP  
4.5  
Active Power, Standby Power and Deep Power-down modes  
When Chip Select (S) is Low, the device is selected, and in the Active Power mode.  
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