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M25P10-AVMN6TP/Y 参数 Datasheet PDF下载

M25P10-AVMN6TP/Y图片预览
型号: M25P10-AVMN6TP/Y
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位,串行闪存, 50MHz的SPI总线接口 [1 Mbit, serial Flash memory, 50 MHz SPI bus interface]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 51 页 / 989 K
品牌: NUMONYX [ NUMONYX B.V ]
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DC and AC parameters
M25P10-A
10
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristic tables that
follow are derived from tests performed under the measurement conditions summarized in
the relevant tables. Designers should check that the operating conditions in their circuit
match the measurement conditions when relying on the quoted parameters.
Table 10.
Symbol
V
CC
T
A
Supply voltage
Ambient operating temperature (device grade 6)
Ambient operating temperature (device grade 3)
Operating conditions
Parameter
Min
2.3
(1)
–40
–40
Max
3.6
85
°C
125
Unit
V
1. Only in products with process technology code Y. In products with process technology code X, Vcc(min) is
2.7 V.
Table 11.
Data retention and endurance
Condition
Device grade 6
Device grade 3
at 55 °C
Min
Max
100,000
cycles per sector
10,000
20
years
Unit
Parameter
Erase/Program
cycles
Data retention
Table 12.
Symbol
C
L
AC measurement conditions
Parameter
Load capacitance
Input rise and fall times
Input pulse voltages
Input timing reference voltages
Output timing reference voltages
Min
30
5
0.2V
CC
to 0.8V
CC
0.3V
CC
to 0.7V
CC
V
CC
/ 2
Max
Unit
pF
ns
V
V
V
1. Output Hi-Z is defined as the point where data out is no longer driven.
Figure 21. AC measurement I/O waveform
Input levels
0.8VCC
Input and output
timing reference levels
0.7VCC
0.5VCC
0.3VCC
AI07455
0.2VCC
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