Revision history
M25P128
13
Revision history
Table 21. Document revision history
Date
Revision
Changes
02-May-2005
0.1
First issue.
Table 2: Protected area sizes updated.
09-Jun-2005
0.2
Memory capacity modified in Section 6.3: Read identification (RDID).
Updated tPP values in Table 17: AC characteristics for 130 nm
devices and tVSL value in Table 8: Power-up timing and VWI
threshold for 65 nm devices. Modified information in Section 4.1:
Page programming and Section 6.8: Page program (PP).
28-Aug-2005
0.3
Document status promoted from Target specification to Preliminary
data.
Packages are ECOPACK® compliant. Blank option removed under
Plating technology in Table 20. Read Electronic Signature (RES)
instruction removed. ICC1 parameter updated in Table 14: DC
characteristics for 65 nm devices.
20-Jan-2006
1
Document status promoted from Preliminary Data to full Datasheet.
Write Protect pin (W) changed to Write protect/enhanced program
supply voltage (W/VPP). Section 4.4: Fast program/erase mode and
Figure 24: VPPH timing added. Power-up specified for Fast
Program/Erase mode in Power-up and power-down section.
17-Oct-2006
2
Figure 4: Bus master and memory devices on the SPI bus modified
and Note 2 added.
Note 1 added below Table 18: VDFPN8 (MLP8), 8-lead Very thin
Dual Flat Package No lead, 8 × 6mm, package mechanical data.
VIO max modified in Table 10: Absolute maximum ratings.
10-Dec-2007
26-Nov-2009
3
4
Applied Numonyx branding.
Removed references to multilevel cell technology and ECOPACK®
packages.
Added: Table 14: DC characteristics for 65 nm devices and Table 15:
AC characteristics for 65 nm devices, and references to 65 nm
process technology throughout the document
Modified D2 value in Table 18: VDFPN8 (MLP8), 8-lead Very thin
Dual Flat Package No lead, 8 × 6mm, package mechanical data.
17-Dec-2009
1-Feb-2010
5
6
Added “Process Technology” to Ordering Information table.
Added sector erase cycle times to Table 15.: AC characteristics for
65 nm devices.
Changed Icc3 test conditions in Table 14.: DC characteristics for
65 nm devices as follows: 50 MHz to 54 MHz and 20 MHz to 33 MHz.
46/47
NUMONYX [ NUMONYX B.V ]
