Intel® Embedded Flash Memory (J3 v. D)
7.2
Program, Erase, Block-Lock Specifications
Table 13.
Configuration Performance
#
Symbol
Parameter
Typ
Max(8)
Unit
Notes
Write Buffer Byte Program Time
(Time to Program 32 bytes/16 words)
W16
128
654
µs
1,2,3,4,5,6,7
Byte Program Time (Using Word/Byte Program Command)
for 130nm
40
175
µs
1,2,3,4
tWHQV3
tEHQV3
W16
Byte Program Time (Using Word/Byte Program Command)
for 65nm
125
0.53
1.0
150
2.4
4.0
µs
1,2,3,4
1,2,3,4
1,2,3,4
Block Program Time (Using Write to Buffer Command)
Block Erase Time
sec
sec
tWHQV4
tEHQV4
W16
W16
W16
W16
tWHQV5
tEHQV5
Set Lock-Bit Time
50
0.5
15
60
0.70
20
µs
sec
µs
1,2,3,4,9
1,2,3,4,9
1,2,3,9
tWHQV6
tEHQV6
Clear Block Lock-Bits Time
Program Suspend Latency Time to Read
tWHRH1
tEHRH1
tWHRH
tEHRH
W16
WY
Erase Suspend Latency Time to Read
STS Pulse Width Low Time
15
20
µs
ns
1,2,3,9
1
tSTS
500
Notes:
1.
Typical values measured at TA = +25 °C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to
change based on device characterization.
2.
3.
4.
5.
6.
7.
8.
9.
These performance numbers are valid for all speed versions.
Sampled but not 100% tested.
Excludes system-level overhead.
These values are valid when the buffer is full, and the start address is aligned on a 32-byte boundary.
Effective per-byte program time (tWHQV1, tEHQV1) is 4µs/byte (typical).
Effective per-word program time (tWHQV2, tEHQV2) is 8µs/word (typical).
Max values are measured at worst case temperature, data pattern and VCC corner after 100k cycles (except as noted).
Max values are expressed at 25 °C/-40 °C.
7.3
Reset Specifications
Figure 14.
AC Waveform for Reset Operation
STS (R)
P1
P2
RP# (P)
P3
Vcc
Note: STS is shown in its default mode (RY/BY#)
December 2007
Document Number: 316577-006
Datasheet
29
NUMONYX [ NUMONYX B.V ]
