Numonyx™ StrataFlash
®
Wireless Memory
(L18) with AD-Multiplexed I/O
Datasheet
Product Features
High performance Read-While-Write/Erase
— 85 ns initial access
— 54MHz with zero wait state, 14 ns clock-to-
data output synchronous-burst mode
— 4-, 8-, 16-, and continuous-word burst
mode
— Burst suspend
— Programmable WAIT configuration
— Buffered Enhanced Factory Programming
(Buffered EFP): 5 µs/byte (Typ)
— 1.8 V low-power buffered and non-buffered
programming @ 7 µs/byte (Typ)
Architecture
— Asymmetrically-blocked architecture
— Multiple 8-Mbit partitions: 64Mb and 128Mb
devices
— Multiple 16-Mbit partitions: 256Mb devices
— Four 16-KWord parameter blocks: top
configuration
— 64-KWord main blocks
— Dual-operation: Read-While-Write (RWW)
or Read-While-Erase (RWE)
— Status register for partition and device
status
Density and Packaging
— 64-, 128-, and 256 Mbit density in VF BGA
package
— 16-bit wide data bus
Power
— 1.7 V to 2.0 V V
CC
operation
— I/O voltage: 1.35 V – 2.0 V, 1.7 V– 2.0 V
— Standby current: 25 µA (Typ) for 256-Mbit
— 4-Word synchronous read current: 15 mA
(Typ) @ 54 MHz
— Automatic Power Savings (APS) mode
Security
— OTP space:
• 64 unique device identifier bits
• 64 user-programmable OTP bits
• Additional 2048 user-programmable OTP
bits
— Absolute write protection: V
PP
= GND
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
Software
— 20 µs (Typ) program suspend
— 20 µs (Typ) erase suspend
— Intel® Flash Data Integrator (FDI)
optimized
— Basic Command Set (BCS) and Extended
Command Set (ECS) compatible
— Common Flash Interface (CFI) capable
Quality and Reliability
— Expanded temperature: –25° C to +85° C
— Minimum 100,000 erase cycles per block
— Intel ETOX* VIII process technology (0.13
µm)
313295-04
November 2007
NUMONYX [ NUMONYX B.V ]
