Numonyx™ Wireless Flash Memory (W30)
•
RWE -
Read-While-Erase
•
RWW -
Read-While-Write
•
SCSP -
Stacked Chip Scale Package
•
SRD -
Status Register Data
•
VF BGA -
Very-thin, Fine-pitch, Ball Grid Array
•
WSM -
Write State Machine
1.3
Conventions
The following abbreviated terms and phrases are used throughout this document:
•
1.8 V
refers to the V
CC
operating voltage range of 1.7 V – 1.9 V (except where
noted).
•
3.0 V
refers to the V
CCQ
operating voltage range of 2.2 V - 3.3 V.
•
V
PP
= 12 V
refers to 12 V ± 5%.
• When referring to registers, the term
set
means the bit is a logical 1, and
cleared
means the bit is a logical 0.
• The terms
pin
and
signal
are often used interchangeably to refer to the external
signal connections on the package. (Ball is the term used for BGA).
• A
word
is 2 bytes, or 16 bits.
•
Signal
names are in all CAPS (for example, WAIT).
•
Voltage
applied to the signal is subscripted (for example, V
PP
).
Throughout this document, references are made to top, bottom, parameter, and
partition. To clarify these references, the following conventions have been adopted:
• A
block
is a group of bits (or words) that erase simultaneously with one block
erase instruction.
• A
main block
contains 32 Kwords.
• A
parameter block
contains 4 Kwords.
• The
Block Base Address
(BBA) is the first address of a block.
• A
partition
is a group of blocks that share erase and program circuitry and a
common status register.
• The
Partition Base Address
(PBA) is the first address of a partition. For example,
on a 32-Mbit top-parameter flash device, partition number 5 has a PBA of
0x140000.
• The
top partition
is located at the highest physical flash device address. This
partition can be a main partition or a parameter partition.
• The
bottom partition
is located at the lowest physical flash device address. This
partition can be a main partition or a parameter partition.
• A
main partition
contains only main blocks.
• A
parameter partition
contains a mixture of main blocks and parameter blocks.
• A
top parameter device
(TPD) has the parameter partition at the top of the
memory map with the parameter blocks at the top of that partition. This flash
device type was formerly referred to as a top-boot flash device.
• A
bottom parameter device
(BPD) has the parameter partition at the bottom of
the memory map with the parameter blocks at the bottom of that partition. This
flash device type was formerly referred to as a bottom-boot block flash device.
Datasheet
8
November 2007
Order Number: 290702-13