Numonyx™ Wireless Flash Memory (W30)
The flash device Command User Interface (CUI) links the system processor to the
internal flash memory operation. A valid command sequence written to the CUI initiates
the flash device Write State Machine (WSM) operation, which automatically executes
the algorithms, timings, and verifications necessary to manage flash memory program
and erase. An internal status register provides ready/busy indication results of the
operation (success, fail, and so on).
Three power-saving features– Automatic Power Savings (APS), standby, and RST#–
can significantly reduce power consumption.
• The flash device automatically enters APS mode following read cycle completion.
• Standby mode begins when the system deselects the flash memory by de-asserting
CE#.
• Driving RST# low produces power savings similar to standby mode. It also resets
the part to read-array mode (important for system-level reset), clears internal
status registers, and provides an additional level of flash device write protection.
2.2
Memory Map and Partitioning
The W30 flash memory device is divided into 4-Mbit physical partitions. This
partitioning allows simultaneous RWW or RWE operations, and enables users to
segment code and data areas on 4-Mbit boundaries. The flash memory array is
asymmetrically blocked, which enables system code and data integration within a
single flash device. Each block can be erased independently in block erase mode.
Simultaneous program and erase operations are not allowed; only one partition at a
time can be actively programming or erasing. See Table 1, “Bottom Parameter Memory
Map” on page 11 and Table 2, “Top Parameter Memory Map” on page 11.
• The 32-Mbit flash device has eight partitions.
• The 64-Mbit flash device has 16 partitions.
• The 128-Mbit flash device has 32 partitions.
Each flash device density contains one parameter partition and several main partitions.
The 4-Mbit parameter partition contains eight 4-Kword parameter blocks and seven 32-
Kword main blocks. Each 4-Mbit main partition contains eight 32-Kword blocks.
The bulk of the flash memory array is divided into main blocks that can store code or
data, and parameter blocks that allow storage of frequently updated small parameters
that are normally stored in EEPROM. By using software techniques, the word-rewrite
functionality of EEPROMs can be emulated.
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Datasheet
10
November 2007
Order Number: 290702-13
NUMONYX [ NUMONYX B.V ]
