Numonyx™ Wireless Flash Memory (W30)
28F640W30, 28F320W30, 28F128W30
Datasheet
Product Features
High Performance Read-While-Write/Erase
— Burst Frequency at 40 MHz
— 70 ns Initial Access Speed
— 25 ns Page-Mode Read Speed
— 20 ns Burst-Mode Read Speed
— Burst-Mode and Page-Mode in All Blocks
and across All Partition Boundaries
— Burst Suspend Feature
— Enhanced Factory Programming:
3.5 µs per Word Program Time
— Programmable WAIT Signal Polarity
Flash Power
— V
CC
= 1.70 V – 1.90 V
— V
CCQ
= 2.20 V – 3.30 V
— Standby Current (130 nm) = 8 µA (typ.)
— Read Current = 7 mA
(4 word burst, typical)
Flash Software
— 5 µs/9 µs (typ.) Program/Erase Suspend
Latency Time
— Numonyx™ Flash Data Integrator (FDI) and
Common Flash Interface (CFI) Compatible
Quality and Reliability
— Operating Temperature:
–40 °C to +85 °C
— 100K Minimum Erase Cycles
— 130 nm ETOX™ VIII Process
— 180 nm ETOX™ VII Process
Flash Architecture
— Multiple 4-Mbit Partitions
— Dual Operation: RWW or RWE
— Parameter Block Size = 4-Kword
— Main block size = 32-Kword
— Top or Bottom Parameter Blocks
Flash Security
— 128-bit Protection Register: 64 Unique
Device Identifier Bits; 64 User OTP
Protection Register Bits
— Absolute Write Protection with V
PP
at
Ground
— Program and Erase Lockout during Power
Transitions
— Individual and Instantaneous Block
Locking/Unlocking with Lock-Down
Density and Packaging
— 130 nm: 32Mb, 64Mb, and 128Mb in VF
BGA Package; 64Mb, 128Mb in QUAD+
Package
— 180 nm: 32Mb and 128Mb Densities in VF
BGA Package; 64Mb Density in µBGA*
Package
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch
— 16-bit Data Bus
Order Number: 290702-13
November 2007
NUMONYX [ NUMONYX B.V ]
