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LF444CM 参数 Datasheet PDF下载

LF444CM图片预览
型号: LF444CM
PDF下载: 下载PDF文件 查看货源
内容描述: 四路低功耗JFET输入运算放大器 [Quad Low Power JFET Input Operational Amplifier]
分类和应用: 运算放大器光电二极管
文件页数/大小: 10 页 / 362 K
品牌: NSC [ NATIONAL SEMICONDUCTOR ]
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AC Electrical Characteristics
Symbol
Parameter
Amplifier-to-Amplifier
Coupling
SR
GBW
e
n
Slew Rate
Gain-Bandwidth Product
Equivalent Input Noise Voltage
(Note 5)
Conditions
Min
LF444A
Typ
−120
Max
Min
LF444
Typ
−120
1
1
35
Max
dB
V/µs
MHz
Units
V
S
=
±
15V, T
A
= 25˚C
V
S
=
±
15V, T
A
= 25˚C
T
A
= 25˚C, R
S
= 100Ω,
f = 1 kHz
T
A
= 25˚C, f = 1 kHz
1
1
35
i
n
Equivalent Input Noise Current
0.01
0.01
Note 1:
Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 2:
Any of the amplifier outputs can be shorted to ground indefinitely, however, more than one should not be simultaneously shorted as the maximum junction
temperature will be exceeded.
Note 3:
For operating at elevated temperature, these devices must be derated based on a thermal resistance of
θ
jA
.
Note 4:
The LF444A is available in both the commercial temperature range 0˚C
T
A
70˚C and the military temperature range −55˚C
T
A
125˚C. The LF444 is
available in the commercial temperature range only. The temperature range is designated by the position just before the package type in the device number. A “C”
indicates the commercial temperature range and an “M” indicates the military temperature range. The military temperature range is available in “D” package only.
Note 5:
Unless otherwise specified the specifications apply over the full temperature range and for V
S
=
±
20V for the LF444A and for V
S
=
±
15V for the LF444. V
OS
,
I
B
, and I
OS
are measured at V
CM
= 0.
Note 6:
The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, T
j
. Due to limited pro-
duction test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient tem-
perature as a result of internal power dissipation, P
D
. T
j
= T
A
+
θ
jA
P
D
where
θ
jA
is the thermal resistance from junction to ambient. Use of a heat sink is recommended
if input bias current is to be kept to a minimum.
Note 7:
Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice from
±
15V to
±
5V for the LF444 and from
±
20V to
±
5V for the LF444A.
Note 8:
Refer to RETS444X for LF444MD military specifications.
Note 9:
Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate outside
guaranteed limits.
Note 10:
Human body model, 1.5 kΩ in series with 100 pF.
Note 11:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device is func-
tional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guar-
antee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is
given, however, the typical value is a good indication of device performance.
Typical Performance Characteristics
Input Bias Current
Input Bias Current
Supply Current
DS009156-12
DS009156-13
DS009156-14
3
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