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DS90CP22M-8 参数 Datasheet PDF下载

DS90CP22M-8图片预览
型号: DS90CP22M-8
PDF下载: 下载PDF文件 查看货源
内容描述: 800 Mbps的2×2 LVDS交叉点开关 [800 Mbps 2x2 LVDS Crosspoint Switch]
分类和应用: 开关
文件页数/大小: 10 页 / 1406 K
品牌: NSC [ NATIONAL SEMICONDUCTOR ]
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DS90CP22
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC
)
−0.3V to +4V
CMOS/TTL Input Voltage (EN0,
−0.3V to (V
CC
+ 0.3V)
EN1, SEL0, SEL1)
LVDS Receiver Input Voltage (IN
+, IN−)
−0.3V to +4V
LVDS Driver Output Voltage (OUT
+, OUT−)
−0.3V to +4V
LVDS Output Short Circuit Current
Continuous
Junction Temperature
+150°C
Storage Temperature Range
−65°C to +150°C
Lead Temperature
(Soldering, 4 sec.)
+260°C
Maximum Package Power Dissipation at 25°C
16L SOIC
16L SOIC Package Derating
16L TSSOP
16L TSSOP Package Derating
ESD Rating:
(HBM, 1.5kΩ, 100pF)
(EIAJ, 0Ω, 200pF)
1.435 W
11.48 mW/°C above +25°C
0.866 W
9.6 mW/°C above +25°C
> 5 kV
> 250 V
Recommended Operating
Conditions
Supply Voltage (V
CC
)
Receiver Input Voltage
Operating Free Air Temperature
Min Typ Max Unit
s
3.0 3.3 3.6
V
0
V
CC
V
-40 +25 +85 °C
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified
Symbol
V
IH
V
IL
I
IH
I
IL
V
CL
V
OD
ΔV
OD
V
OS
ΔV
OS
I
OZ
I
OFF
I
OS
I
OSB
V
TH
V
TL
V
CMR
I
IN
Parameter
High Level Input Voltage
Low Level Input Voltage
High Level Input Current
Low Level Input Current
Input Clamp Voltage
Differential Output Voltage
V
IN
= 3.6V or 2.0V; V
CC
= 3.6V
V
IN
= 0V or 0.8V; V
CC
= 3.6V
I
CL
= −18 mA
R
L
= 75Ω
R
L
= 75Ω,
V
CC
= 3.3V, T
A
= 25°C
Change in V
OD
between Complimentary Output States
Offset Voltage (Note 3)
Change in V
OS
between Complimentary Output States
Output TRI-STATE
®
Current
Power-Off Leakage Current
Output Short Circuit Current
Both Outputs Short Circuit Current
Differential Input High Threshold
Differential Input Low Threshold
Common Mode Voltage Range
Input Current
TRI-STATE Output,
V
OUT
= V
CC
or GND
V
CC
= 0V; V
OUT
= 3.6V or GND
V
OUT+
OR V
OUT−
= 0V
V
OUT+
AND V
OUT−
= 0V
V
CM
= +0.05V or +1.2V or +3.25V,
Vcc = 3.3V
V
ID
= 100mV, Vcc = 3.3V
V
IN
= +3.0V, V
CC
= 3.6V or 0V
V
IN
= 0V, V
CC
= 3.6V or 0V
SUPPLY CURRENT
I
CCD
I
CCZ
Total Supply Current
TRI-STATE Supply Current
R
L
= 75Ω,
C
L
= 5 pF,
EN0 = EN1 = High
EN0 = EN1 = Low
98
43
125
55
mA
mA
−100
0.05
±1
±1
±1
−15
−30
0
0
3.25
±10
±10
±10
−25
−50
+100
μA
mA
mA
mV
mV
V
μA
μA
±1
1.0
1.2
270
285
Conditions
Min
2.0
GND
+7
±1
−0.8
365
365
Typ
Max
V
CC
0.8
+20
±10
−1.5
475
440
35
1.45
35
±10
Units
V
V
μA
μA
V
mV
mV
mV
V
mV
μA
CMOS/TTL DC SPECIFICATIONS (EN0,EN1,SEL0,SEL1)
LVDS OUTPUT DC SPECIFICATIONS (OUT0,OUT1)
LVDS RECEIVER DC SPECIFICATIONS (IN0,IN1)
Note 1:
“Absolute Maximum Ratings” are these beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device should
be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation.
Note 2:
All typical are given for V
CC
= +3.3V and T
A
= +25°C, unless otherwise stated.
Note 3:
V
OS
is defined and measured on the ATE as (V
OH
+ V
OL
) / 2.
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