8.0 Electrical Characteristics (Continued)
DC Electrical Characteristics (−40˚C ≤ TA ≤ +85˚C) (Continued)
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Parameter
Output Current Levels
Conditions
Min
Typ
Max
Units
Source (Weak Pull-Up Mode)
Source (Push-Pull Mode)
VCC = 4.5V, VOH = 3.8V
VCC = 4.5V, VOH = 3.8V
VCC = 4.5V, VOL = 1.0V
−10
−7
µA
mA
mA
mA
µA
mA
V
Sink (Push-Pull Mode) (Note 7)
Allowable Sink Current per Pin
TRI-STATE Leakage
10
15
VCC = 5.5V
−0.5
2.0
+0.5
200
Maximum Input Current without Latchup (Note 5)
RAM Retention Voltage, VR (in HALT Mode)
Input Capacitance
7
pF
Voltage on G6 to force execution from Boot ROM G6 rise time must be
2 x VCC
100
VCC + 7
V
(Note 8)
slower than 100 ns
VIN = 11V, VCC = 5.5V
25˚C
G6 Rise Time to force execution from Boot ROM
nS
µA
>
Input Current on G6 when Input VCC
500
100k
100
Flash Endurance
cycles
years
Flash Data Retention
AC Electrical Characteristics (−40˚C ≤ TA ≤ +85˚C)
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Parameter
Instruction Cycle Time (tC)
Crystal/Resonator
Conditions
Min
Typ
Max
Units
4.5V ≤ VCC ≤ 5.5V
0.5
DC
2
µs
Frequency of MICROWIRE/PLUS in
Slave Mode
MHz
MICROWIRE/PLUS Setup Time (tUWS
)
20
20
ns
ns
MICROWIRE/PLUS Hold Time (tUWH
MICROWIRE/PLUS Output Propagation
Delay (tUPD
)
150
ns
)
Input Pulse Width
Interrupt Input High Time
Interrupt Input Low Time
1
1
1
1
1
1
tC
tC
tC
Timer 1 Input High Time
Timer 1 Input Low Time
tC
Timer 2, 3 Input High Time (Note 6)
Timer 2, 3 Input Low Time (Note 6)
Output Pulse Width
MCLK or tC
MCLK or tC
Timer 2, 3 Output High Time
Timer 2, 3 Output Low Time
USART Bit Time when using External
CKX
150
150
ns
ns
6 CKI
periods
USART CKX Frequency when being
Driven by Internal Baud Rate Generator
Reset Pulse Width
2
MHz
0.5
8
µs
Flash Memory Mass Erase Time
Flash Memory Page Erase Time
ms
See Table 13, Typical
Flash Memory
Endurance
1
ms
t
= instruction cycle time.
C
<
Note 2: Maximum rate of voltage change must be 0.5 V/ms.
11
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