Absolute Maximum Ratings
(Note 1)
Storage Temperature
−65˚C to +150˚C
Ambient Temperature under Bias
−55˚C to +125˚C
Junction Temperature under Bias
Ceramic
−55˚C to +175˚C
V
CC
Pin Potential to
Ground Pin
−0.5V to +7.0V
Input Voltage (Note 2)
−0.5V to +7.0V
Input Current (Note 2)
−30 mA to +5.0 mA
Voltage Applied to Any Output
in the Disabled or
Power-Off State
−0.5V to +5.5V
in the HIGH State
−0.5V to V
CC
Current Applied to Output
in LOW State (Max)
Twice the rated I
OL
(mA)
DC Latchup Source Current
−500 mA
Over Voltage Latchup (I/O)
10V
Recommended Operating
Conditions
Free Air Ambient Temperature
Military
Supply Voltage
Military
Minimum Input Edge Rate
Data Input
Enable Input
−55˚C to +125˚C
+4.5V to +5.5V
(∆V/∆t)
50 mV/ns
20 mV/ns
Note 1:
Absolute maximum ratings are values beyond which the device may
be damaged or have its useful life impaired. Functional operation under these
conditions is not implied.
Note 2:
Either voltage limit or current limit is sufficient to protect inputs.
DC Electrical Characteristics
Symbol
V
IH
V
IL
V
CD
V
OH
V
OL
I
IH
I
BVI
I
IL
V
ID
I
OZH
I
OZL
I
OS
I
CEX
I
ZZ
I
CCH
I
CCL
I
CCZ
I
CCT
Parameter
Min
Input HIGH Voltage
Input LOW Voltage
Input Clamp Diode Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Current
Input HIGH Current
Breakdown Test
Input LOW Current
Input Leakage Test
Output Leakage Current
Output Leakage Current
Output Short-Circuit Current
Output High Leakage Current
Bus Drainage Test
Power Supply Current
Power Supply Current
Power Supply Current
Additional I
CC
/Input
Outputs Enabled
Outputs TRI-STATE
Outputs TRI-STATE
I
CCD
Dynamic I
CC
(Note 4)
No Load
0.12
−100
4.75
50
−50
−275
50
100
50
30
50
2.5
2.5
2.5
−5
−5
V
µA
µA
mA
µA
µA
µA
mA
µA
mA
mA
mA
mA/
MHz
Max
Max
0.0
0 − 5.5V
0 − 5.5V
Max
Max
0.0
Max
Max
Max
µA
Max
V
IN
= 0.5V (Note 4)
V
IN
= 0.0V
I
ID
= 1.9 µA
All Other Pins Grounded
V
OUT
= 2.7V; OE = 2.0V
V
OUT
= 0.5V; OE = 2.0V
V
OUT
= 0.0V
V
OUT
= V
CC
V
OUT
= 5.5V; All Others GND
All Outputs HIGH
All Outputs LOW
OE = V
CC
All Others at V
CC
or GND
V
I
= V
CC
− 2.1V
Enable Input V
I
= V
CC
− 2.1V
Data Input V
I
= V
CC
− 2.1V
All Others at V
CC
or GND
Outputs Open
OE = GND, LE = V
CC
(Note 3)
One Bit Toggling, 50% Duty Cycle
Note 3:
For 8 bits toggling, I
CCD
<
0.8 mA/MHz.
Note 4:
Guaranteed but not tested.
ABT573
Typ
Max
2.0
0.8
−1.2
54ABT
54ABT
54ABT
2.5
2.0
0.55
5
5
7
Units
V
V
V
V
V
µA
µA
V
CC
Conditions
Recognized HIGH Signal
Recognized LOW Signal
Min
Min
Min
Max
Max
I
IN
= −18 mA
I
OH
= −3 mA
I
OH
= −24 mA
I
OL
= 48 mA
V
IN
= 2.7V (Note 4)
V
IN
= V
CC
V
IN
= 7.0V
3
www.national.com
NSC [ NATIONAL SEMICONDUCTOR ]
