Capacitance
T
A
e a
25 C
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
f
e
1 MHz (Note 5)
Conditions
V
IN
e
0V
V
OUT
e
0V
Typ
4
8
Max
10
12
Units
pF
pF
AC Test Conditions
Output Load
Input Rise and Fall Times
Input Pulse Levels
1 TTL Gate and C
L
e
100 pF
s
20 ns
0 8V to 2 2V
8 9 10)
Timing Measurement Reference Level
Inputs
Outputs
1V and 2V
0 8V and 2V
AC Waveforms
(Notes 2
TL D 10329 – 3
Note 1
Stresses above those listed under ‘‘Absolute Maximum Ratings’’ may cause permanent damage to the device This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied Exposure to absolute
maximum rating conditions for extended periods may affect device reliability
Note 2
V
CC
must be applied simultaneously or before V
PP
and removed simultaneously or after V
PP
Note 3
V
PP
may be connected to V
CC
except during programming I
CC1
s
the sum of the I
CC
active and I
PP
read currents
Note 4
Typical values are for T
A
e a
25 C and nominal supply voltages
Note 5
This parameter is only sampled and is not 100% tested
Note 6
OE may be delayed up to t
ACC
b
t
OE
after the falling edge of CE without impact on t
ACC
Note 7
The t
DF
compare level is determined as follows
High to TRI-STATE the measured V
OH1
(DC)
b
0 10V
Low to TRI-STATE the measured V
OL1
(DC)
a
0 10V
Note 8
TRI-STATE may be attained using OE or CE
Note 9
The power switching characteristics of EPROMs require careful device decoupling It is recommended that a 0 1
mF
ceramic capacitor be used on every
device between V
CC
and GND
Note 10
The 27C16 requires one address transition after initial power-up to reset the outputs
Note 11
The outputs must be restricted to V
CC
a
0 3V to avoid latch-up and device damage
4
NSC [ NATIONAL SEMICONDUCTOR ]
