27C16 16 384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified
January 1989
27C16
16 384-Bit (2048 x 8) UV Erasable CMOS PROM
Military Qualified
General Description
The 27C16 is a high speed 16K UV erasable and electrically
reprogrammable CMOS EPROM ideally suited for applica-
tions where fast turnaround pattern experimentation and
low power consumption are important requirements
The 27C16 is packaged in a 24-pin dual-in-line package with
transparent lid The transparent lid allows the user to ex-
pose the chip to ultraviolet light to erase the bit pattern A
new pattern can then be written into the device by following
the programming procedure
This EPROM is fabricated with the reliable high volume
time proven P
2
CMOS
TM
silicon gate technology
The 27C16 specified on this data sheet is fully compliant
with MIL-STD-883 Revision C
Features
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Access time down to 450 ns
Low CMOS power consumption
Active Power 26 25 mW max
Standby Power 0 53 mW max (98% savings)
Performance compatible to NSC800
TM
CMOS micro-
processor
Single 5V power supply
Pin compatible to MM2716 and higher density EPROMs
Static no clocks required
TTL compatible inputs outputs
TRI-STATE output
Windowed DIP Package
Specifications guaranteed over full military temperature
range (
b
55 C to
a
125 C)
Block Diagram
Pin Names
A0 – A10
CE
OE
O
0
–O
7
PGM
NC
Addresses
Chip Enable
Output Enable
Outputs
Program
No Connect
TL D 10329 – 1
TRI-STATE is a registered trademark of National Semiconductor Corporation
NS800
TM
are P
2
CMOS
TM
trademarks of National Semiconductor Corporation
C
1995 National Semiconductor Corporation
TL D 10329
RRD-B30M105 Printed in U S A
NSC [ NATIONAL SEMICONDUCTOR ]
