Absolute Maximum Ratings (Note 1)
ESD (Note 2)
≥2000V
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Recommended Operating
Conditions
Case Temperature (TC)
Military
Above which the useful life may be impaired (Note 1)
Storage Temperature (TSTG
)
−65˚C to +150˚C
−55˚C to +125˚C
−5.7V to −4.2V
Maximum Junction Temperture (TJ)
Ceramic
Supply Voltage (VEE
)
+175˚C
−7.0V to +0.5V
VEE to +0.5V
−50 mA
Note 1: Absolute maximum ratings are those values beyond which the de-
vice may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Pin Potential to Ground Pin (VEE
Input Voltage (DC)
)
Note 2: ESD testing conforms to MIL-STD-883, Method 3015.
Output Current (DC Output HIGH)
Military Version
DC Electrical Characteristics
=
=
=
=
VEE −4.2V to −5.7V, VCC VCCA GND, TC −55˚C to +125˚C (Note 5)
Symbol
Parameter
Min
Typ
Max
Units
TC
Conditions
Notes
=
VOH
Output HIGH
Voltage
0˚C to
VIN VIH (Max)
or VIL (Min)
Loading with
50Ω to −2.0V
−1025
−870
mV
+125˚C
−55˚C
0˚C to
+125˚C
−55˚C
0˚C to
+125˚C
−55˚C
0˚C to
+125˚C
−55˚C
0˚C to
+125˚C
0˚C to
+125˚C
−55˚C
−1085
−1830
−870
mV
mV
(Notes 3, 4, 5)
VOL
Output LOW Voltage
−1620
−1830
−1035
−1555
mV
mV
=
VOHC
VOLC
VBB
Output HIGH
Voltage
VIN VIH (Max)
Loading with
50Ω to −2.0V
or VIL (Min)
−1085
−1380
mV
mV
(Notes 3, 4, 5)
(Notes 3, 4, 5)
Output LOW
Voltage
−1610
−1555
−1260
mV
mV
= =
IVBB 0 µA, VEE 4.2V
Output Reference
Voltage
= =
IVBB −250 µA, VEE −5.7V
−1260
mV
(Notes 3, 4, 5)
(Notes 3, 4, 5)
(Notes 3, 4, 5)
(Notes 3, 4, 5, 6)
(Notes 3, 4, 5, 6)
= =
IVBB −350 µA, VEE −5.7V
−1396
150
mV
mV
VDIFF
VCM
VIH
Input Voltage
Differential
−55˚C to Required for Full Output Swing
+125˚C
Common Mode
Voltage
VCC − 2.0
−1165
VCC − 0.5
−870
−1475
50
V
−55˚C to
+125˚C
Single-Ended
Input High Voltage
Single-Ended
Input Low Voltage
Input HIGH Current
mV
mV
µA
−55˚C to Guaranteed HIGH Signal for All
+125˚C
Inputs (with Dn tied to VBB)
VIL
−1830
−55˚C to Guaranteed LOW Signal for All
+125˚C
0˚C to
+125˚C
−55˚C
Inputs (with Dn tied to VBB)
= =
VIN VIH (Max), Da–De VBB,
IIH
=
Da–De VIL
(Notes 3, 4, 5)
(Notes 3, 4, 5)
(Notes 3, 4, 5)
(Min)
70
µA
µA
= =
−55˚C to VIN VEE, Da–De VBB,
ICBO
Input Leakage
Current
−10
−65
=
Da–De VIL
(Min)
+125˚C
=
IEE
Power Supply
Current
−25
mA
−55˚C to Da–De VBB
,
=
Da–De VIL
(Min)
+125˚C
Note 3: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case
condition at cold temperatures.
Note 4: Screen tested 100% on each device at −55˚C, +25˚C, and +125˚C, Subgroups 1, 2, 3, 7, and 8.
Note 5: Sample tested (Method 5005, Table I) on each manufactured lot at −55˚C, +25˚C, and +125˚C, Subgroups A1, 2, 3, 7, and 8.
Note 6: Guaranteed by applying specified input condition and testing V /V
.
OH OL
3
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