5075 series
5075×J to 5075×N
V
= 2.25 to 3.63V, V = 0.5V , V = 0V, Ta = –40 to +85°C unless otherwise noted.
DD
C
DD SS
Rating
Typ
1.2
1.6
0.9
1.3
0.8
1.0
0.7
0.9
0.7
0.9
–
Parameter
Symbol
Conditions
Unit
Min
–
Max
2.4
3.2
1.8
2.6
1.6
2.0
1.4
1.8
1.4
1.8
–
V
V
V
V
V
V
V
V
V
V
= 2.5V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
= 3.3V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
5075×J (f ), Measurement circuit 1,
O
no load, f = 48MHz, f
= 48MHz
O
OUT
–
–
5075×K (f /2), Measurement circuit 1,
O
no load, f = 48MHz, f
= 24MHz
O
OUT
–
–
5075×L (f /4), Measurement circuit 1,
O
no load, f = 48MHz, f
Current consumption
I
DD
= 12MHz
O
OUT
–
–
5075×M (f /8), Measurement circuit 1,
O
no load, f = 48MHz, f
= 6MHz
O
OUT
–
–
5075×N (f /16), Measurement circuit 1,
O
no load, f = 48MHz, f
= 3MHz
O
OUT
–
HIGH-level output voltage
LOW-level output voltage
V
Q pin, Measurement circuit 2, I = –2.8mA
OH
V
– 0.4
DD
OH
V
Q pin, Measurement circuit 2, I = 2.8mA
OL
–
210
210
–
–
0.4
840
840
–
V
OL
R
420
420
5.6
3.1
1.5
8.4
4.7
2.3
–
kΩ
kΩ
pF
VC1
Oscillator block built-in
resistance
Measurement circuit 3
R
VC2
V
= 0.3V
= 1.65V
= 3.0V
= 0.3V
= 1.65V
= 3.0V
C
C
C
C
C
C
C
V
V
V
V
V
–
–
pF
VC1
Design value (a monitor pattern on a
wafer is tested), Excluding parasitic
capacitance.
–
–
pF
Oscillator block built-in
capacitance
–
–
pF
C
–
–
pF
VC2
–
–
pF
VC input resistance
VC input impedance
R
Measurement circuit 4, Ta = 25°C
10
–
MΩ
VIN
Measurement circuit 5, V = 0V, f = 10kHz, Ta = 25°C
C
(a monitor pattern on a wafer is tested)
Z
–
–
–
450
37
–
–
–
kΩ
pF
VIN
Measurement circuit 5, V = 0V, f = 10kHz, Ta = 25°C
C
(a monitor pattern on a wafer is tested)
VC input capacitance
Modulation
C
VIN
Measurement circuit 6, –3dB frequency, V = 3.3V,
DD
V = 3.3Vp-p, Ta = 25°C, f = 48MHz
C O
fm
23
kHz
*1
characteristics
*1. The modulation characteristics may vary with the crystal used.
SEIKO NPC CORPORATION —6