SM5021 series
5V operation: AA, AB, AC, AD, BA, BB, BC, BD, KD, LD series
V
= 4.5 to 5.5V, V = 0V, Ta = − 20 to + 80°C unless otherwise noted.
SS
DD
Rating
Parameter
Symbol
Condition
Unit
min
3.9
–
typ
4.2
0.3
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, V = 4.5V, I = 8mA
DD OH
V
V
V
V
OH
V
Q: Measurement cct 2, V = 4.5V, I = 8mA
DD OL
0.4
–
OL
V
INHN
INHN
2.0
–
IH
V
–
0.8
10
10
IL
Q: Measurement cct 2, V = 5.5V, INHN = LOW, V = V
DD OH
–
–
DD
Output leakage current
I
ꢀA
Z
Q: Measurement cct 2, V = 5.5V, INHN = LOW, V = V
DD OL
–
–
SS
SM5021AAH, CF5021AA
SM5021ABH, CF5021AB
SM5021ACH, CF5021AC
SM5021ADH, CF5021AD
SM5021KDH, CF5021KD
70MHz crystal oscillator,
measurement cct 3, load cct 1,
–
18
35
INHN = open, C = 15pF
L
Current consumption
I
mA
DD
70MHz crystal oscillator,
measurement cct 3, load cct 2,
SM5021B×H, CF5021B×
SM5021L×H, CF5021L×
–
18
35
INHN = open, C = 15pF
L
INHN pull-up resistance
R
Measurement cct 4
25
5.1
2.8
3.3
2.3
7.44
100
6.0
3.3
3.9
2.7
8
250
6.9
kΩ
kΩ
UP
SM5021×AH, CF5021×A
SM5021×BH, CF5021×B
SM5021×CH, CF5021×C
SM5021×DH, CF5021×D
SM5021×AH, CF5021×A
3.8
Feedback resistance
(A×, B× series only)
R
Measurement cct 5
f
4.5
3.1
C
8.56
pF
pF
G
Design value. A monitor pattern on a SM5021×BH, CF5021×B
wafer is tested.
Built-in capacitance
SM5021×CH, CF5021×C
SM5021×DH, CF5021×D
C
13.95
15
16.05
D
SEIKO NPC CORPORATION —6
NPC [ NIPPON PRECISION CIRCUITS INC ]
