SM5021 series
Electrical Characteristics
3V operation: AA, AB, AC, AD, AE, KD, KE series
= 2.7 to 3.6V, V = 0V, Ta = − 20 to + 80°C unless otherwise noted.
V
DD
SS
Rating
typ
Parameter
Symbol
Condition
Unit
min
max
SM5021×AH, CF5021×A
Q: Measurement cct 1, V = 2.7V, SM5021×BH, CF5021×B
DD
I
= 4mA
SM5021×CH, CF5021×C
SM5021×DH, CF5021×D
OH
HIGH-level output voltage
V
2.1
2.4
0.3
–
V
OH
Q: Measurement cct 1, V = 2.7V,
DD
SM5021×EH, CF5021×E
SM5021×AH, CF5021×A
I
= 8mA
OH
Q: Measurement cct 2, V = 2.7V, SM5021×BH, CF5021×B
DD
I
= 4mA
SM5021×CH, CF5021×C
SM5021×DH, CF5021×D
OL
LOW-level output voltage
V
–
0.4
V
OL
Q: Measurement cct 2, V = 2.7V,
DD
SM5021×EH, CF5021×E
I
= 8mA
OL
HIGH-level input voltage
LOW-level input voltage
V
INHN
INHN
2.0
–
–
–
–
–
–
V
V
IH
V
0.5
10
10
IL
Q: Measurement cct 2, V = 3.3V, INHN = LOW, V = V
DD OH
–
DD
Output leakage current
I
ꢀA
Z
Q: Measurement cct 2, V = 3.3V, INHN = LOW, V = V
DD OL
–
SS
70MHz crystal oscillator,
measurement cct 3, load cct 1,
SM5021A×H, CF5021A×
SM5021K×H, CF5021K×
Current consumption
I
–
13
25
mA
DD
INHN = open, C = 15pF
L
INHN pull-up resistance
R
Measurement cct 4
25
5.1
2.8
3.3
100
6.0
3.3
3.9
250
6.9
3.8
4.5
kΩ
UP
SM5021×AH, CF5021×A
SM5021×BH, CF5021×B
SM5021×CH, CF5021×C
Feedback resistance
(A× series only)
R
Measurement cct 5
kΩ
f
SM5021×DH, CF5021×D
SM5021×EH, CF5021×E
2.3
2.7
8
3.1
C
Design value. A monitor pattern on a wafer is tested.
SM5021×AH, CF5021×A
7.44
8.56
pF
pF
G
SM5021×BH, CF5021×B
SM5021×CH, CF5021×C
SM5021×DH, CF5021×D
Built-in capacitance
13.95
11.16
15
12
16.05
12.84
Design value. A monitor pattern on a
wafer is tested.
C
D
SM5021×EH, CF5021×E
SEIKO NPC CORPORATION —5
NPC [ NIPPON PRECISION CIRCUITS INC ]
