Nexperia
PESD5V5HS-SF
Ultra low capacitance bidirectional ESD protection diode
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff
voltage
Tamb = 25 °C
-
-
5.5
V
VBR
IRM
Cd
breakdown voltage
IR = 1 mA; Tamb = 25 °C
7.5
9
11
50
0.95
6.3
-
V
reverse leakage current VRWM = 7 V; Tamb = 25 °C
-
-
-
-
-
-
1
nA
pF
V
diode capacitance
clamping voltage
f = 1 MHz; VR = 0 V; Tamb = 25 °C
IPPM = 8 A; tp = 8/20 µs; Tamb = 25 °C
IPP = 8 A; tp = TLP; Tamb = 25 °C
IPP = 16 A; tp = TLP; Tamb = 25 °C
IR = 10 A; Tamb = 25 °C
-
VCL
[1]
[2]
[2]
[2]
5.2
4.6
6.5
0.23
V
-
V
Rdyn
dynamic resistance
-
Ω
[1] According to IEC 61000-4-5.
[2] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD STM5.5.1-2008.
aaa-027608
aaa-027609
30
25
20
15
10
5
0
I
I
PP
(A)
PP
(A)
-5
-10
-15
-20
-25
-30
0
0
5
10
15
20
25
30
(V)
-30
-25
-20
-15
-10
-5
0
(V)
V
V
CL
CL
Transmission Line Pulse (TLP)
tp = 100 ns; tr = 1 ns
Transmission Line Pulse (TLP)
tp = 100 ns; tr = 1 ns
Fig. 3. Dynamic resistance with positive clamping
voltage; typical values
Fig. 4. Dynamic resistance with negative clamping
voltage; typical values
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PESD5V5HS-SF
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Nexperia B.V. 2022. All rights reserved
Product data sheet
23 May 2022
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