Nexperia
PESD5V0U1BLD
Ultra low capacitance bidirectional ESD protection diode
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff
voltage
Tamb = 25 °C
-
-
5
V
VBR
IRM
Cd
breakdown voltage
IR = 5 mA; Tamb = 25 °C
5.5
7
9.5
100
3.5
-
V
reverse leakage current VRWM = 5 V; Tamb = 25 °C
-
-
-
5
nA
pF
Ω
diode capacitance
dynamic resistance
f = 1 MHz; VR = 0 V; Tamb = 25 °C
IR = 10 A; Tamb = 25 °C
2.9
0.8
Rdyn
[1]
[1] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD STM5.5.1-2008.
006aab036
I
PP
3.0
C
d
(pF)
2.6
I
R
I
-V
-V
-V
BR RWM
RM
CL
-I
-I
V
V
V
RM
R
RWM BR CL
2.2
1.8
-
+
-I
PP
0
1
2
3
4
5
006aaa676
V
(V)
R
f = 1 MHz; Tamb = 25 °C
Fig. 5. V-I characteristics for a bidirectional ESD
protection diode
Fig. 4. Diode capacitance as a function of reverse
voltage; typical values
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PESD5V0U1BLD
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Nexperia B.V. 2023. All rights reserved
Product data sheet
1 April 2023
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