2PB709ART
Nexperia
45 V, 100 mA PNP general-purpose transistor
006aab028
006aab029
500
−0.1
I
(mA) = −0.75
B
I
C
h
FE
−0.7
−0.6
−0.5
(1)
(A)
−0.65
−0.55
400
−0.08
−0.45
−0.35
−0.4
−0.3
−0.2
300
200
100
0
−0.06
−0.04
−0.02
0
(2)
(3)
−0.25
−0.15
−0.1
−0.05
−1
2
−10
−1
−10
−10
0
−2
−4
−6
−8
V
−10
(V)
I
(mA)
C
CE
VCE = −10 V
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. DC current gain as a function of collector
current; typical values
Fig 4. Collector current as a function of
collector-emitter voltage; typical values
006aab030
006aab031
−1.3
−1
V
BEsat
(V)
V
CEsat
(V)
−0.9
−0.5
−0.1
(1)
(2)
−1
−10
(3)
(1)
(2)
(3)
−2
−10
−1
2
−1
2
−10
−1
−10
−10
−10
−1
−10
−10
I
C
(mA)
I (mA)
C
IC/IB = 10
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. Base-emitter saturation voltage as a function of
collector current; typical values
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values
2PB709ART
© Nexperia B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 March 2007
5 of 10
NEXPERIA [ Nexperia ]
