RoHS
20T Series RoHS
SEMICONDUCTOR
Fig.3 RMS on-state current versus case temperature
(full cycle)
Fig.4 Relative variation of thermal impedance
versus pulse duration.
IT(RMS) (A)
K=[Zth/Rth]
1
25
20
15
10
5
α =180°
Z
th(j-c)
TO-220AB
TO-263
TO-3P
Z
th(j-a)
TO-220AB(insulated)
TO-3P(insulated)
0.1
Tc(°C)
0
tp(s)
1E+0
0.01
0
10 20 30 40 50 60 70 80 90 100 110 120 130
1E-3
1E-2
1E-1
1E+1
1E+2 5E+2
Fig.6 Surge peak on-state current versus number
of cycles.
Fig.5 On-state characteristics (maximum values).
I
(A)
T max.
ITSM (A)
1000
100
1000
j
V
R
= 1.04V
= 20Ωm
to
d
t=20ms
Non repetitive
T initial=25°C
One cycle
T =T max
j
j
j
10
1
T =25°C
j
VTM(V)
Number of cycles
100
1
10
100
1000
1
2
3
4
5
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l2t.
Fig.8 Relative variation of gate trigger current and
holding current versus junction temperature.
lTSM (A), l2t(A2s)
lGT,lH,lL[Tj] / lGT,lH,lL [Tj=25°C]
1000
2.5
2.0
1.5
1.0
T initial=25°C
j
I
TSM
I
GT
I
H
& I
L
I2t
0.5
0.0
tp(ms)
Tj(°C)
100
0.01
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100 110120 130
0.10
1.00
10.00
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