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20T10B-CW 参数 Datasheet PDF下载

20T10B-CW图片预览
型号: 20T10B-CW
PDF下载: 下载PDF文件 查看货源
内容描述: 三端双向可控硅, 20A Sunbberless [TRIACs, 20A Sunbberless]
分类和应用: 可控硅三端双向交流开关
文件页数/大小: 5 页 / 1171 K
品牌: NELLSEMI [ NELL SEMICONDUCTOR CO., LTD ]
 浏览型号20T10B-CW的Datasheet PDF文件第1页浏览型号20T10B-CW的Datasheet PDF文件第2页浏览型号20T10B-CW的Datasheet PDF文件第3页浏览型号20T10B-CW的Datasheet PDF文件第5页  
RoHS  
20T Series RoHS  
SEMICONDUCTOR  
Fig.3 RMS on-state current versus case temperature  
(full cycle)  
Fig.4 Relative variation of thermal impedance  
versus pulse duration.  
IT(RMS) (A)  
K=[Zth/Rth]  
1
25  
20  
15  
10  
5
α =180°  
Z
th(j-c)  
TO-220AB  
TO-263  
TO-3P  
Z
th(j-a)  
TO-220AB(insulated)  
TO-3P(insulated)  
0.1  
Tc(°C)  
0
tp(s)  
1E+0  
0.01  
0
10 20 30 40 50 60 70 80 90 100 110 120 130  
1E-3  
1E-2  
1E-1  
1E+1  
1E+2 5E+2  
Fig.6 Surge peak on-state current versus number  
of cycles.  
Fig.5 On-state characteristics (maximum values).  
I
(A)  
T max.  
ITSM (A)  
1000  
100  
1000  
j
V
R
= 1.04V  
= 20Ωm  
to  
d
t=20ms  
Non repetitive  
T initial=25°C  
One cycle  
T =T max  
j
j
j
10  
1
T =25°C  
j
VTM(V)  
Number of cycles  
100  
1
10  
100  
1000  
1
2
3
4
5
Fig.7 Non-repetitive surge peak on-state current  
for a sinusoidal pulse with width tp < 10ms.  
and corresponding value of l2t.  
Fig.8 Relative variation of gate trigger current and  
holding current versus junction temperature.  
lTSM (A), l2t(A2s)  
lGT,lH,lL[Tj] / lGT,lH,lL [Tj=25°C]  
1000  
2.5  
2.0  
1.5  
1.0  
T initial=25°C  
j
I
TSM  
I
GT  
I
H
& I  
L
I2t  
0.5  
0.0  
tp(ms)  
Tj(°C)  
100  
0.01  
-40 -30 -20 -10  
0
10 20 30 40 50 60 70 80 90 100 110120 130  
0.10  
1.00  
10.00  
www.nellsemi.com  
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