RoHS
20T Series RoHS
SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
SNUBBERLESS (3 quadrants)
20Txxxx
QUADRANT
SYMBOL
TEST CONDITIONS
Unit
BW
CW
(1)
50
35
IGT
I - II - III
I - II - III
MAX.
MAX.
mA
V
VD = 12 V, RL = 33Ω
VGT
1.5
0.2
VD = VDRM, RL = 3.3KΩ
Tj = 125°C
VGD
MIN.
MAX.
MAX.
I - II - III
V
(2)
60
IT = 500 mA
40
IH
mA
70
80
I - III
50
60
IG = 1.2 IGT
IL
mA
II
dV/dt(2)
MIN.
MIN.
250
11
500
18
VD = 67% VDRM gate open ,Tj = 125°C
,
V/µs
(dI/dt)c(2)
(dV/dt)c = 20 A/ms, Tj = 125°C
A/ms
STATIC CHARACTERISTICS
SYMBOL
TEST CONDITIONS
UNIT
V
VALUE
(2)
ITM = 28 A, tP = 380 µs
Threshold voltage
Tj = 25°C
VTM
1.55
1.04
20
MAX.
(2)
Tj = 125°C
Vt0
V
MAX.
MAX.
(2)
Dynamic resistance
Rd
Tj = 125°C
Tj = 25°C
mΩ
µA
5
IDRM
IRRM
VD = VDRM
VR = VRRM
MAX.
Tj = 125°C
2.5
mA
Note 1: Minimum lGT is guaranted at 5% of lGT max.
Note 2: For both polarities of A2 referenced to A1.
THERMAL RESISTANCE
UNIT
SYMBOL
VALUE
TO-220AB, TO-263, TO-3P
TO-220AB Insulated, TO-3P Insulated
TO-263
1.3
2.1
45
Rth(j-c)
Junction to case (AC)
S = 1 cm2
°C/W
Rth(j-a)
TO-220AB Insulated, TO-220AB
Junction to ambient
60
TO-3P, TO-3P Insulated
S = Copper surface under tab.
PRODUCT SELECTOR
VOLTAGE (xx)
PART NUMBER
SENSITIVITY
TYPE
PACKAGE
1000 V
600 V
800 V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
35 mA
50 mA
35 mA
50 mA
35 mA
50 mA
Snubberless
Snubberless
Snubberless
Snubberless
Snubberless
Snubberless
TO-220AB
TO-220AB
TO-3P
20TxxA-CW/20TxxAl-CW
20TxxA-BW/20TxxAl-BW
20TxxB-CW/20TxxBl-CW
20TxxB-BW/20TxxBl-BW
20TxxH-CW
TO-3P
D2PAK
D2PAK
20TxxH-BW
AI: Insulated TO-220AB package
BI: Insulated TO-3P package
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