RoHS
RoHS
16T Series
SEMICONDUCTOR
Fig7. Non-repetitive surge peak on-state
current for a sinusoidal
Fig.8 Relative variation of gate trigger current
ITSM(A), I²t(A²S)
IGT,IH,IL[Tj] / IGT,IH,IL[Tj = 25°C]
3000
2.5
2.0
Tj initial=25°C
holding current and latching current versus junction
dl/dt limitation:
50A/µs
temperature (typical values)
IGT
1000
lTSM
1.5
1.0
IH&IL
0.5
0.0
pulse with width tp<10ms and
corresponding value of l²t
l²t
Tj(°C)
100
0.01
0.10
1.00
10.00
-40
-20
0
20
40
60
80
100
120 140
tp(ms)
Fig.9 Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
Fig.10 Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
(dI/dt)c [T s
(dI/dt)c [T ] /
pecified]
j
j
2.0
1.8
1.6
1.4
1.2
1.0
6
5
4
3
2
1
0
snubberless and Logic level types
standard types
SW
C
B
CW/BW
0.8
0.6
Tj(°C)
(dV/dt)c (V/µs)
0.4
1.0
10.0
100.0
0
25
50
75
100
0.1
125
Fig.11 D²PAK thermal resistance junction to ambient versus
copper surface under tab (printed circuit FR4, copper
thickness: 35µm
Rth(j-a)(°C/W)
80
70
60
50
40
D²PAK
30
20
10
0
S(cm²)
0
4
8
12
16
20
24
28
32
36
40
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