RoHS
RoHS
16T Series
SEMICONDUCTOR
Fig.1 Maximum power dissipation versus
on-state rms current (full cycle)
Fig.2 On-state rms current versus case
temperature (full cycle)
I
18
16
(A)
T(RMS)
P(W)
20
18
TO-263AB
16
14
12
10
8
14
12
10
TO-220AB
insulated
8
6
6
4
2
0
4
2
0
IT(RMS)(A)
TC(°C)
0
2
4
6
8
12
14
16
10
0
50
100
25
75
125
Fig.3 On-state current versus ambient
temperature (full cycle)
Fig.4 Relative variation of thermal impedance
versus pulse duration
K=[Z /R
]
th th
IT(RMS)(A)
4.0
3.5
1E+0
printed circuit board Fr4, copper thickness:35 µm
D²PAK
(S=1cm²)
Zth(j-c)
3.0
2.5
Zth(j-a)
1E-1
2.0
1.5
1.0
0.5
0.0
Tc(°c)
tp(s)
1E+0
1E-2
0
25
50
75
100
125
1E-3
1E-2
1E-1
1E+1
1E+2
5E+2
Fig.6 surge peak on- state current versus
number of cycles
Fig.5 On-state characteristics (maximum values)
I
(A)
ITSM(A)
TM
180
160
140
120
100
80
200
100
Tj max.
Vto=0.85V
Rd=25mΩ
t=20ms
One cycle
Non repetitive
Tjinitial=25°C
Tj=Tjmax.
Tj=25°c
Repetitive
Tc=85°C
10
60
40
20
0
VTM (V)
Number of cycles
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
10
1000
100
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