RoHS
12T Series RoHS
SEMICONDUCTOR
Fig.1 Maximum power dissipation versus RMS on-state
current (full cycle)
Fig.2 RMS on-state current versus case temperature
(full cycle)
P (W)
IT(RMS) (A)
14
13
12
16
14
12
10
8
11
10
9
TO-220AB
(insulated)
8
7
6
5
4
6
TO-220AB
TO-263
4
3
2
1
0
2
0
IT(RMS)(A)
TC(°C)
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
10 11 12
Fig.3 RMS on-state current versus ambient
temperature (printed circuit board FR4,
copper thickness: 35µm)(full cycle)
Fig.4 Relative variation of thermal impedance
versus pulse duration.
K=[Zth/Rth]
IT(RMS) (A)
1E+0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Zth(j-c)
D2PAK
(S=1cm2)
Zth(j-a)
1E-1
1E-2
tp(s)
Tc(°C)
50
0
25
75
100
125
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
Fig.6 Surge peak on-state current versus number
of cycles.
Fig.5 On-state characteristics (maximum values).
ITSM (A)
I
(A)
130
100
10
1
T max.
120
110
100
90
j
V
to
= 0.85 V
= 35 mΩ
t=20ms
R
d
Non repetitive
T initial=25°C
One cycle
j
80
T =T max
j
j
70
60
50
40
30
20
10
0
T =25°C
j
Repetitive
T =90°C
c
Number of cycles
VTM(V)
1
10
100
1000
0.5 1.0
1.5
2.0 2.5
3.0
3.5
4.0
4.5 5.0
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