欢迎访问ic37.com |
会员登录 免费注册
发布采购

12T10H-BW 参数 Datasheet PDF下载

12T10H-BW图片预览
型号: 12T10H-BW
PDF下载: 下载PDF文件 查看货源
内容描述: 三端双向可控硅,12A无缓冲器,逻辑层次和水平 [TRIACs, 12A Snubberless, Logic Level and Standard]
分类和应用: 可控硅三端双向交流开关
文件页数/大小: 6 页 / 598 K
品牌: NELLSEMI [ NELL SEMICONDUCTOR CO., LTD ]
 浏览型号12T10H-BW的Datasheet PDF文件第2页浏览型号12T10H-BW的Datasheet PDF文件第3页浏览型号12T10H-BW的Datasheet PDF文件第4页浏览型号12T10H-BW的Datasheet PDF文件第5页浏览型号12T10H-BW的Datasheet PDF文件第6页  
RoHS  
12T Series RoHS  
SEMICONDUCTOR  
TRIACs, 12A  
Snubberless, Logic Level and Standard  
FEATURES  
Medium current triac  
Low thermal resistance with clip bonding  
A2  
Low thermal resistance insulation ceramic  
for insulated TO-220AB package  
1
2
High commutation (4Q) or very high  
commutation (3Q) capability  
3
A1  
A2  
G
12T series are UL certified (File ref: E320098)  
TO-220AB (non-Insulated)  
TO-220AB (lnsulated)  
Packages are RoHS compliant  
(12TxxA)  
(12TxxAI)  
A2  
APPLICATIONS  
ON/OFF or phase angle function in applications  
such as static relays, light dimmers and appliance  
motors speed controllers.  
A1  
A2  
G
TO-263 (D2PAK)  
The snubberless versions (with suffix W) are  
especially recommended for use on inductive loads,  
because of their high commutation performances.  
The 12T series provides an insulated tab (rated at  
2500VRMS).  
(12TxxH)  
MAIN FEATURES  
SYMBOL  
VALUE  
UNIT  
A
IT(RMS)  
12  
VDRM/VRRM  
IGT(Q1)  
V
600 to 1000  
5 to 50  
mA  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUE  
UNIT  
Tc = 105ºC  
Tc = 90ºC  
t = 20 ms  
t = 16.7 ms  
TO-263/TO-220AB  
RMS on-state current (full sine wave)  
IT(RMS)  
A
12  
TO-220AB insulated  
F =50 Hz  
120  
126  
72  
Non repetitive surge peak on-state  
ITSM  
A
current (full cycle, T initial = 25°C)  
j
F =60 Hz  
I2t  
I2t Value for fusing  
A2s  
t
= 10 ms  
p
Critical rate of rise of on-state current  
IG = 2xlGT, tr≤100ns  
Tj =125ºC  
Tj =125ºC  
A/µs  
F =100 Hz  
50  
dI/dt  
Tp =20 µs  
Tj =125ºC  
Peak gate current  
IGM  
4
1
A
PG(AV)  
Average gate power dissipation  
Storage temperature range  
Operating junction temperature range  
W
Tstg  
Tj  
- 40 to + 150  
- 40 to + 125  
ºC  
www.nellsemi.com  
Page 1 of 6