2SK3326
PACKAGE DRAWING (Unit: mm)
Isolated TO-220(MP-45F)
4.5±0.2
10.0±0.3
3.2±0.2
2.7±0.2
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
2.5±0.1
0.65±0.1
0.7±0.1
2.54
1.3±0.2
1.5±0.2
2.54
Source
1. Gate
2. Drain
3. Source
1
2 3
Remark Strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
7
Data Sheet D14204EJ1V0DS00