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NT5CB256M16DP-FLB 参数 Datasheet PDF下载

NT5CB256M16DP-FLB图片预览
型号: NT5CB256M16DP-FLB
PDF下载: 下载PDF文件 查看货源
内容描述: [Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 163 页 / 4365 K
品牌: NANYA [ Nanya Technology Corporation. ]
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DDR3(L) 4Gb SDRAM  
NT5CB(C)512M8DN / NT5CB(C)256M16DP  
Write Leveling  
For better signal integrity, DDR3(L) memory adopted fly by topology for the commands, addresses, control signals, and  
clocks. The fly by topology has benefits from reducing number of stubs and their length but in other aspect, causes flight  
time skew between clock and strobe at every DRAM on DIMM. It makes it difficult for the Controller to maintain tDQSS,  
tDSS, and tDSH specification. Therefore, the controller should support “write leveling” in DDR3(L) SDRAM to compensate  
the skew.  
The memory controller can use the “write leveling” feature and feedback from the DDR3(L) SDRAM to adjust the DQS -  
 to CK -  relationship. The memory controller involved in the leveling must have adjustable delay setting on DQS -  
 to align the rising edge of DQS -  with that of the clock at the DRAM pin. DRAM asynchronously feeds back CK -  
, sampled with the rising edge of DQS - , through the DQ bus. The controller repeatedly delays DQS - until a  
transition from 0 to 1 is detected. The DQS -  delay established though this exercise would ensure tDQSS specification.  
Besides tDQSS, tDSS, and tDSH specification also needs to be fulfilled. One way to achieve this is to combine the actual  
tDQSS in the application with an appropriate duty cycle and jitter on the DQS- signals. Depending on the actual  
tDQSS in the application, the actual values for tDQSL and tDQSH may have to be better than the absolute limits provided in  
“AC Timing Parameters” section in order to satisfy tDSS and tDSH specification. A conceptual timing of this scheme is  
show as below figure.  
Write Leveling Concept  
Diff_CK  
Source  
Diff _DQS  
_
Diff CK  
Destination  
Diff_DQS  
DQ  
0 or 1  
0
0
0
Push DQS to capture  
0 -1 transition  
DQ  
0 or 1  
1
1
1
DQS/ driven by the controller during leveling mode must be determined by the DRAM based on ranks populated.  
Similarly, the DQ bus driven by the DRAM must also be terminated at the controller.  
A separated feedback mechanism should be able for each byte lane. The low byte lanes prime DQ, DQ0, carries the  
leveling feedback to the controller across the DRAM configurations x4/x8 whereas DQ0 indicates the lower diff_DQS  
(diff_LDQS) to clock relationship. The high byte lanes prime DQ, DQ8, provides the feedback of the upper diff_DQS  
(diff_UDQS) to clock relationship.  
Version 2.3  
02/2017  
42  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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