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NT5CB256M16DP-FLB 参数 Datasheet PDF下载

NT5CB256M16DP-FLB图片预览
型号: NT5CB256M16DP-FLB
PDF下载: 下载PDF文件 查看货源
内容描述: [Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 163 页 / 4365 K
品牌: NANYA [ Nanya Technology Corporation. ]
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DDR3(L) 4Gb SDRAM  
NT5CB(C)512M8DN / NT5CB(C)256M16DP  
Change Frequency during Precharge Power-down  
Previous Clock Frequency  
New Clock Frequency  
Te1  
T0  
T1  
T2  
Ta0  
Tb0  
Tc0  
Tc1  
Td0  
Td1  
Te0  
tCKb  
tCHb tCLb  
tCK  
CK  
CK  
tCH  
tCL  
tCKSRE  
tCKSRX  
CKE  
tIH  
tIS  
tIS  
tIH  
tCPDED  
tCKE  
Command  
Valid  
Valid  
MRS  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
tXP  
DLL  
Reset  
Address  
ODT  
tAOFPD/tAOF  
tIS  
tIH  
DQS,  
DQS  
High-Z  
tDLLK  
DQ  
High-Z  
DM  
Enter Precharge  
Power-Down mode  
Exit Precharge  
Power-Down mode  
Frequency  
Change  
NOTES:  
1. Applicable for both SLOW EXIT and FAST EXIT Precharge Power-down  
2. tAOFPD and tAOF must be statisfied and outputs High-Z prior to T1; refer to ODT timing section for exact requirements  
3. If the RTT_NOM feature was enabled in the mode register prior to entering Precharge power down mode, the ODT signal must  
continuously be registered LOW ensuring RTT is in an off state. If the RTT_NOM feature was disabled in the mode register prior to entering  
Precharge power down mode, RTT will remain in the off state. The ODT signal can be registered either LOW or HIGH in this case.  
Version 2.3  
02/2017  
41  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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