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NT5CB256M16DP-FLB 参数 Datasheet PDF下载

NT5CB256M16DP-FLB图片预览
型号: NT5CB256M16DP-FLB
PDF下载: 下载PDF文件 查看货源
内容描述: [Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 163 页 / 4365 K
品牌: NANYA [ Nanya Technology Corporation. ]
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DDR3(L) 4Gb SDRAM  
NT5CB(C)512M8DN / NT5CB(C)256M16DP  
DLL on/off switching procedure  
DDR3(L) DLL-off mode is entered by setting MR1 bit A0 to “1”; this will disable the DLL for subsequent operation until A0 bit  
set back to “0”.  
DLL “on” to DLL “off” Procedure  
To switch from DLL “on” to DLL “off” requires the frequency to be changed during Self-Refresh outlined in the following  
procedure:  
1. Starting from Idle state (all banks pre-charged, all timing fulfilled, and DRAMs On-die Termination resistors, RTT, must  
be in high impedance state before MRS to MR1 to disable the DLL).  
2. Set MR1 Bit A0 to “1” to disable the DLL.  
3. Wait tMOD.  
4. Enter Self Refresh Mode; wait until (tCKSRE) is satisfied.  
5. Change frequency, in guidance with “Input Clock Frequency Change” section.  
6. Wait until a stable clock is available for at least (tCKSRX) at DRAM inputs.  
7. Starting with the Self Refresh Exit command, CKE must continuously be registered HIGH until all tMOD timings from any  
MRS command are satisfied. In addition, if any ODT features were enabled in the mode registers when Self Refresh  
mode was entered, the ODT signal must continuously be registered LOW until all tMOD timings from any MRS  
command are satisfied. If both ODT features were disabled in the mode registers when Self Refresh mode was entered,  
ODT signal can be registered LOW or HIGH.  
8. Wait tXS, and then set Mode Registers with appropriate values (especially an update of CL, CWL, and WR may be  
necessary. A ZQCL command may also be issued after tXS).  
9. Wait for tMOD, and then DRAM is ready for next command.  
Version 2.3  
02/2017  
36  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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