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NT5CB512M8DP-EKB 参数 Datasheet PDF下载

NT5CB512M8DP-EKB图片预览
型号: NT5CB512M8DP-EKB
PDF下载: 下载PDF文件 查看货源
内容描述: [Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 163 页 / 4365 K
品牌: NANYA [ Nanya Technology Corporation. ]
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DDR3(L) 4Gb SDRAM  
NT5CB(C)512M8DN / NT5CB(C)256M16DP  
Refresh Command  
The Refresh command (REF) is used during normal operation of the DDR3(L) SDRAMs. This command is not persistent,  
so it must be issued each time a refresh is required. The DDR3(L) SDRAM requires Refresh cycles at an average periodic  
interval of tREFI. When , RA, and A are held Low and WE High at the rising edge of the clock, the chip enters a  
Refresh cycle. All banks of the SDRAM must be precharged and idle for a minimum of the precharge time tRP(min) before  
the Refresh Command can be applied. The refresh addressing is generated by the internal refresh controller. This makes  
the address bits “Don’t Care” during a Refresh command. An internal address counter suppliers the address during the  
refresh cycle. No control of the external address bus is required once this cycle has started. When the refresh cycle has  
completed, all banks of the SDRAM will be in the precharged (idle) state. A delay between the Refresh Command and the  
next valid command, except NOP or DES, must be greater than or equal to the minimum Refresh cycle time tRFC(min) as  
shown in the following figure.  
In general, a Refresh command needs to be issued to the DDR3(L) SDRAM regularly every tREFI interval. To allow for  
improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh interval is provided.  
A maximum of 8 Refresh commands can be postponed during operation of the DDR3(L) SDRAM, meaning that at no point  
in time more than a total of 8 Refresh commands are allowed to be postponed. In case that 8 Refresh commands are  
postponed in a row, the resulting maximum interval between the surrounding Refresh commands is limited to 9 x tREFI. A  
maximum of 8 additional Refresh commands can be issued in advance (“pulled in”), with each one reducing the number of  
regular Refresh commands required later by one. Note that pulling in more than 8 Refresh commands in advance does not  
further reduce the number of regular Refresh commands required later, so that the resulting maximum interval between two  
surrounding Refresh command is limited to 9 x tREFI. Before entering Self-Refresh Mode, all postponed Refresh  
commands must be executed.  
Self-Refresh Entry/Exit Timing  
T0  
T1  
Ta0  
Ta1  
Tb0  
Tb1  
Tb2  
Tb3  
Tc0  
Tc1  
CK  
CK  
CMD  
REF  
NOP  
NOP  
REF  
NOP  
NOP  
Valid  
Valid  
Valid  
Valid  
Vaid  
REF  
Valid  
tRFC  
tRFC(min)  
DRAM must be idle  
tREFI (max, 9 x tREFI)  
DRAM must be idle  
Time Break  
Postponing Refresh Commands (Example)  
tREFI  
9 x tREFI  
t
tREFI  
8 REF-Command postponed  
Version 2.3  
02/2017  
63  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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