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NT5CB128M16JR-DIH 参数 Datasheet PDF下载

NT5CB128M16JR-DIH图片预览
型号: NT5CB128M16JR-DIH
PDF下载: 下载PDF文件 查看货源
内容描述: [Automotive DDR3(L) 2Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 154 页 / 4780 K
品牌: NANYA [ Nanya Technology Corporation. ]
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NTC Proprietary  
Level: Property  
DDR3(L)-2Gb SDRAM  
NT5CB(C)256M8JQ/NT5CB(C)128M16JR  
Single-ended levels for CK, DQS, DQSL, DQSU, , , L, or U  
DDR3- 1600  
Symbol  
Parameter  
Unit  
Notes  
Min.  
(VDDQ/2) + 0.175  
(VDDQ/2) + 0.175  
note3  
Max.  
note3  
note3  
Single-ended high-level for strobes  
Single-ended high-level for CK,   
Single-ended low-level for strobes  
Single-ended Low-level for CK,   
1, 2  
1, 2  
1, 2  
1, 2  
V
V
V
V
VSEH  
(VDDQ/2) - 0.175  
(VDDQ/2) - 0.175  
VSEL  
Note:  
note3  
1. For CK,  use VIH/VIL(ac) of ADD/CMD; for strobes (DQS, DQSL, DQSU, CK, , L, or U) use VIH/VIL(ac) of DQs.  
2. VIH(ac)/VIL(ac) for DQs is based on VREFDQ; VIH(ac)/VIL(ac) for ADD/CMD is based on VREFCA; if a reduced ac-high or ac-low  
level is used for a signal group, then the reduced level applies also there.  
3. These values are not defined, however the single-ended signals CK, , DQS, , DQSL, L, DQSU, U need to be within  
the respective limits (VIH(dc)max, VIL(dc)min) for single-ended signals as well as limitations for overshoot and undershoot.  
Version 1.4  
05/2019  
96  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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